Allicdata Part #: | 819-1040-ND |
Manufacturer Part#: |
MR25H40CDF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Everspin Technologies Inc. |
Short Description: | IC RAM 4M SPI 40MHZ 8DFN |
More Detail: | MRAM (Magnetoresistive RAM) Memory IC 4Mb (512K x ... |
DataSheet: | MR25H40CDF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | RAM |
Technology: | MRAM (Magnetoresistive RAM) |
Memory Size: | 4Mb (512K x 8) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN-EP, Small Flag (5x6) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MR25H40CDF is a memory device with a wide range of applications and working principles. This device is widely used and offers significant benefits to users. It is a four megabyte random access memory device that uses ferroelectric capacitors, instead of the conventional capacitors used in standard RAM. As a result, this memory device has a number of features that provide enhanced performance and longer data retention. This makes it ideal for a broad range of applications.
The major advantage of this device is its ultra-low power consumption. It can run at a voltage as low as 1.7 V and consumes only 0.6 mW of power. This makes it perfect for battery operated applications such as mobile devices, PDAs and embedded systems. In addition, this device has a fast cycle time. It can reach peak speeds of up to 10 Mhz, which is significantly faster than other similar memory devices. Therefore, it can be used in time-critical applications such as real-time control systems, recording devices and streaming applications.
The working principle of the MR25H40CDF is based on the ferroelectricity principle. This type of memory device uses ferroelectric capacitors instead of standard capacitors in order to store the charge. When a voltage is applied to the capacitor, it stores a charge until the voltage is removed. This allows the memory device to store data for long periods of time and retain the information even when the power is removed. Furthermore, the ferroelectric capacitor also has a rapid refresh rate, which enables the device to store data quickly.
The MR25H40CDF is a versatile memory device that has a broad range of applications. It is used in industrial control systems, medical devices, multimedia applications, gaming consoles, robotic systems, automotive systems and many other applications. Additionally, the device is highly reliable and durable due to its ultra-low power consumption and low cycle times. This makes it the perfect memory device for users who need fast access times, long data retention and power saving features.
In conclusion, the MR25H40CDF is a versatile and reliable memory device with a wide range of applications and working principles. The device is a great choice for battery operated applications due to its ultra-low power consumption and fast cycle times. Furthermore, it also offers long data retention and fast refresh rates which make it suitable for many other applications such as industrial control systems, medical devices, multimedia applications, gaming consoles, robotic systems and automotive systems. Overall, this is an excellent memory device that offers superior performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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