MR25H10CDF

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1. Describe

MR25H10CDF is a 1,048,576-bit magnetoresistive random access memory (MRAM) device, organized into 131,072 8-bit words. MR25H10 provides serial EEPROM and serial flash compatible read/write timing, no write delay and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in the memory, and there is no delay between writes. For applications that must use a small number of I/O pins to quickly store and retrieve data and programs, MR25H10 is an ideal memory solution. MR25H10 is available in 5 mm x 6 mm 8-pin DFN package or 5 mm x 6 mm 8-pin DFN Small Flag package. Both are compatible with serial EEPROM, flash memory and FeRAM products. MR25H10 provides highly reliable data storage in a wide temperature range. The product offers industrial (-40° to +85°C) and AEC-Q100 grade 1 (-40°C to +125°C) operating temperature range options.

2. Feature

    1. No write delay

    2. Unlimited write endurance

    3. Data retention for more than 20 years

    4. Automatic data protection in case of power failure

    5. Block write protection

    6. Fast and simple SPI interface with clock frequency up to 40 MHz

    7. 2.7 to 3.6 volt power supply range

    8. Low current sleep mode 

    9. Industrial temperature

  10. Available in 8-pin DFN or 8-pin DFN Small Flag RoHS compliant package

  11. Direct replacement of serial EEPROM, flash memory, FeRAM

  12. AEC-Q100 Level 1 option

3. Pin configuration

4. Pin description