Allicdata Part #: | 819-1042-ND |
Manufacturer Part#: |
MR25H10MDF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Everspin Technologies Inc. |
Short Description: | IC RAM 1M SPI 40MHZ 8DFN |
More Detail: | MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x ... |
DataSheet: | MR25H10MDF Datasheet/PDF |
Quantity: | 1347 |
Series: | Automotive, AEC-Q100 |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | RAM |
Technology: | MRAM (Magnetoresistive RAM) |
Memory Size: | 1Mb (128K x 8) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN-EP, Small Flag (5x6) |
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The MR25H10MDF Memory is a device designed to store data or information for an indefinite period of time. It is commonly used in electronics, computers, and other memory-related applications. The MR25H10MDF incorporates the latest advances in technology and provides a wide range of features and data-retention capabilities.
The memory cell used in the MR25H10MDF is a type of non-volatile RAM (NRAM). The NRAM cell used in the MR25H10MDF is unique in that it utilizes ferroelectric dielectrics in order to store data. The ferroelectric dielectrics used in the device are composed of a combination of materials with different electrical properties. When a voltage is applied to the cell, an electric field is created which causes the dielectric material to flip its electrical properties. This flipping of the polarities acts as a switch, changing the electrical state of the cell and thus the data stored in it.
The data stored in the MR25H10MDF memory can be read or written to in a variety of ways. It is capable of being interfaced with a wide range of external systems, including complex microprocessors and other data processing components. The memory also supports a wide range of programming languages, including C, C++, Java and assembler. As a result, software applications can be quickly and easily written for use with the memory.
The MR25H10MDF memory is designed for use in a variety of applications, including industrial, automotive, medical, telecommunications, and aerospace applications. It is capable of being used as a primary storage component, or as a secondary, backup component. In addition to its versatile design, the memory is reliable and highly secure, with a low defect rate and a wide range of environmental and humidity tolerance.
The MR25H10MDF memory is capable of providing a wide range of services, such as random and sequential access, data compression and error correction. It is capable of storing up to 2GB of information, which makes it ideal for applications requiring large data storage capacity. The memory also features a low power consumption, which makes it suitable for use in embedded systems and portable devices. Additionally, the MR25H10MDF is compatible with a range of programming languages and external interfaces, making it a versatile choice for applications involving different types of data.
In conclusion, the MR25H10MDF is an ideal choice for applications requiring reliable and secure memory solutions. Its advanced design and superior performance make it a popular choice among manufacturers in the automotive and aerospace industries, as well as in industrial, medical and consumer applications. The combination of low power consumption and wide range of features and data-retention capabilities make this memory a reliable choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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