MR256DL08BMA45R

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	RAM
Technology:	MRAM (Magnetoresistive RAM)
Memory Size:	256Kb (32K x 8)
Write Cycle Time - Word, Page:	45ns
Access Time:	45ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-LFBGA
Supplier Device Package:	48-FBGA (8x8)

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MR256DL08BMA45R Memory Application Field and Working Principle

Memory is a type of device used to store digital information. MR256DL08BMA45R memory is a type of random access memory (RAM) that is mostly used in digital devices, computers, and smartphones. In this article, we will discuss the application field and working principle of MR256DL08BMA45R memory.

Application Field

MR256DL08BMA45R memory is based on DDR4 technology and operates at speeds of up to 2133 MT/s. It is composed of 256MByte/module that can provide up to 16 GByte/Channel. Its double- or quad-rank DDR4 design ensures power efficiency, and its die-hardened stack is designed to resist bending, shock and vibration. As a result, MR256DL08BMA45R memory can be used in a wide range of fields, such as:

• High performance computing
• Networking
• Telecommunication
• Gaming
• Industrial control
• Medical equipment
• Automated test equipment

Working Principle

MR256DL08BMA45R memory is based on a synchronous dynamic random access memory (SDRAM) technology. It operates in a synchronous mode and requires a clock signal in order to perform its functions. It works by receiving commands from the system via the data bus. The memory then processes the command and performs the necessary operations.The underlying technology of MR256DL08BMA45R memory consists of a collection of cells, each composed of a single transistor and a single capacitor. When a voltage potential is externally applied to the MR256DL08BMA45R memory, a capacitor holds a tiny electrical charge. This allows the memory cells to store either a "0" or a "1" signal. When a read or a write is performed on the memory, the signal is interpreted as either a "1" or a "0" depending on the voltage potential. MR256DL08BMA45R memory provides an optimal balance between speed, density and cost. It allows users to access data and instructions quickly and allows for efficient utilization of memory space. Furthermore, its design is made to be inherently more reliable than previous memory technologies, which makes it suitable for use in mission-critical applications and environments. In conclusion, MR256DL08BMA45R is a type of random access memory (RAM) that is mostly used in digital devices, computers, and smartphones. It is based on DDR4 technology and composed of 256MBytes/module. It can be used in a wide range of fields ranging from high performance computing, to gaming, to automated test equipment. MR256DL08BMA45R memory also relies on a synchronous dynamic random access memory (SDRAM) technology and operates using tiny electrical charges to store either a "0" or a "1" signal. As such, it provides an optimal balance between speed, density, and cost.

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