
Allicdata Part #: | MR25H10CDFR-ND |
Manufacturer Part#: |
MR25H10CDFR |
Price: | $ 3.38 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Everspin Technologies Inc. |
Short Description: | IC RAM 1M SPI 40MHZ 8DFN |
More Detail: | MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x ... |
DataSheet: | ![]() |
Quantity: | 1000 |
4000 +: | $ 3.07509 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | RAM |
Technology: | MRAM (Magnetoresistive RAM) |
Memory Size: | 1Mb (128K x 8) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN-EP, Small Flag (5x6) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MR25H10CDFR are non-volatile memories (NVMs) typically used in embedded systems as a data storage device. This type of memory contains a ferroelectric layer between conductive electrodes. Ferroelectric layers are composed of small molecules, known as ferroelectrics, that become polarized when an electric field is applied and elongate or shorten when placed in an opposite electric field. With this level of charge control, an MR25H10CDFR can be programmed with a range of data and retain that recorded data for years, even when the power is off.
MR25H10CDFR operates in two main modes, the programming mode and the read mode. In the programming mode, an external electric field is applied to the memory device and a voltage level is applied to the control gate of the memory cell, creating an electric field between the ferroelectric layer and the control gate. This electric field causes ferroelectric polarization and stores data in the form of electric charges.
In the read mode, the programming field is reversed and a context gate is applied to measure the remaining ferroelectric charge. Any change in the measured charge will indicate the presence of data stored in the memory cell. MR25H10CDFR is an attractive memory solution for embedded applications due to its non-volatile nature, fast-switching access, and low-power operation.
The key benefits of the MR25H10CDFR are its non-volatility and low power requirements. The memory maintains its content even when the power is shut down, making it useful in applications where a constant power source is not available. Also, the MR25H10CDFR requires little power, reducing system cost and creating a more efficient power-saving solution.
MR25H10CDFR is commonly used in embedded systems, such as consumer electronics and automotive applications. Its low-power, non-volatility requirements make it an ideal solution for these types of applications. It is also used in mobile devices, medical systems, and industrial control systems.
The MR25H10CDFR is an attractive memory solution for embedded systems due to its non-volatile nature, fast-switching access, and low-power operation. It can be used in a variety of applications, including consumer electronics, automotive, mobile devices, medical systems, and industrial control systems. The key benefits of the MR25H10CDFR are its non-volatility and low power requirements, making it an efficient solution for embedded systems.
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