MSM5117400F-60TDR1L

Memory: MSM5117400F-60TDR1L Application Field and Working Principle

The MSM5117400F-60TDR1L is a dynamic random access memory (DRAM) module developed by Fujitsu. It is primarily employed in large-scale computer and data processing applications that require a low profile, enhanced RAM. It is known for its quick access time, robust memory performance, and reliability.

The MSM5117400F-60TDR1L is a high-speed, high-density DRAM module that provides up to 16 megabytes of memory on a single board. The module features a 60-pin connector that provides the electrical interface to the system. The module is fully compatible with standard JEDEC (JointElectron Device Engineering Council) DRAM standards and runs at a clock speed of 80 to 100 MHz.

The MSM5117400F-60TDR1L is designed to provide fast, reliable data access with error-free memory transactions. It is also designed to utilize advanced technology such as rapid access to stored data and error correction code (ECC) checking. The module is compliant with ATX (Advanced Technology Attachment) and ATA (Advanced Technology Attachment) standards, which are used to define the data structure and protocol for the storage of computer data in the form of a hard drive.

The MSM5117400F-60TDR1L supports three kinds of access methods: sequential, random, and non-sequential. Sequential access is a technique used to access data in the same order every time, regardless of the order in which the data is stored. Random access is used to access individual blocks of data in any order. Non-sequential access is a technique used to access specific data blocks, regardless of the order in which the data was written.

The most commonly used application field for the MSM5117400F-60TDR1L is server and data processing applications. This is due to the module\'s high capacity and memory performance. The module can also be used in personal computers, mainframes, and supercomputers. It is capable of supporting up to 16 gigabytes of RAM per module.

The working principle of the MSM5117400F-60TDR1L module is based on the basic principles of DRAM technology. The module stores data as a series of on/off bits, which are generated by the controller. The module utilizes a synchronous DRAM architecture, which allows for simultaneous access to multiple memory locations. This allows for quick access time and high memory throughput.

The MSM5117400F-60TDR1L is a reliable and powerful DRAM module that provides improved memory performance, reliability, and a low profile form factor. It is suitable for large-scale computing environments, server applications, and data processing. The module is capable of supporting up to 16 gigabytes of RAM per module and has a fast access time and high memory throughput.