MSM5118165F-60T3K-MT Allicdata Electronics
Allicdata Part #:

MSM5118165F-60T3K-ND

Manufacturer Part#:

MSM5118165F-60T3K-MT

Price: $ 8.93
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC DRAM 16M PARALLEL 50TSOP II
More Detail: DRAM Memory IC 16Mb (1M x 16) Parallel 30ns 50-TS...
DataSheet: MSM5118165F-60T3K-MT datasheetMSM5118165F-60T3K-MT Datasheet/PDF
Quantity: 1673
1 +: $ 8.11440
Stock 1673Can Ship Immediately
$ 8.93
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: --
Access Time: 30ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II
Base Part Number: MSM5*
Description

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The MSM5118165F-60T3K-MT is a 1.8V 5Gbps Double Data Rate HyperBus memory with a 1.87Gbps, 2.6Gbps, and 5Gbps transfer rate and a typical operating frequency of up to 2.6GHz, and is a cutting-edge memory device specifically designed for high-performance applications in verticals such as computing and embedded sectors. The device utilizes high-speed on-chip transistors, offers advanced features such as architecture-level integration and frequency-scaling for lower power consumption, and offers an enhanced user experience. The device also supports up to 24bit I/O width, in addition to a wide range of configuration options and various power-management modes to provide a complete solution for high-performance solutions. The MSM5118165F-60T3K-MT is a part of a family of HyperBus memory devices and is capable of providing exceptional performance and reliability.

Application Field: The MSM5118165F-60T3K-MT device is suitable for HPC (High Performance Computing) and embedded markets such as cyber security and IoT (Internet of Things) applications, as it offers high-speed data transfer, advanced architecture integration, and reliable operation. This device is also suitable for high-performance storage applications, due to its versatile configuration and wide range of I/O options. Additionally, the device is equipped with a wide range of power-saving options, which makes it ideal for mobile and battery-powered applications.

Working Principle: The MSM5118165F-60T3K-MT device utilizes the advanced HyperBus protocol, which is a highly flexible, high-speed communications protocol that supports up to 5Gbps data transfer. This protocol features a 1.87Gbps, 2.6Gbps and 5Gbps operating frequency and a 24-bit I/O width. The HyperBus protocol is based on the bus topology, meaning it is an interconnected array of components that run in a certain order and - each component can interact with other components in the same array. This enabes the device to access, store and retrieve data with minimal wait times and power, allowing for faster operation and improved performance. The HyperBus protocol also offers a high level of data integrity, meaning that data can be retrieved quickly and accurately from the device.

The MSM5118165F-60T3K-MT device utilizes an architecture-level integration, which enables it to integrate into a larger system with minimal effort. It also supports frequency-scaling for lowering power consumption and user-defined configuration options for further customizing the device. This allows the user to adjust the device\'s performance, depending on their individual needs. In addition, the device offers advanced features such as power-down mode, sleep mode, and standby mode.

The MSM5118165F-60T3K-MT device offers excellent performance, reliability, and value that is suitable for a variety of embedded and HPC applications. Its architecture-level integration, wide range of I/O options, and power-management features make it an ideal choice for high-performance computing and embedded solutions. The HyperBus protocol ensures that the device can achieve its maximum performance with minimal wait times and power consumption, making it an excellent choice for mobile and battery-powered devices.

The specific data is subject to PDF, and the above content is for reference

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