Allicdata Part #: | MSM5117405F-60J3-7-ND |
Manufacturer Part#: |
MSM5117405F-60J3-7 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC DRAM 16M PARALLEL 26SOJ |
More Detail: | DRAM Memory IC 16Mb (4M x 4) Parallel 30ns |
DataSheet: | MSM5117405F-60J3-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | DRAM |
Memory Size: | 16Mb (4M x 4) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 30ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
Base Part Number: | MSM5* |
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MSM5117405F-60J3-7 is among the various types of Random Access Memory (RAM). On a personal computer, the RAM is one of the most important hardware components. RAM is an essential memory component used in RAM modules and is necessary for storing frequently accessed data. To understand the application field and working principle of MSM5117405F-60J3-7 RAM, let us first define what RAM is.
In a general sense, RAM or Random Access Memory is a type of storage device that stores active data that is being used by the elements of a computer system. This type of memory is often referred to as "working memory" and is commonly used to store the information that is being used by the processor or loaded into the computer\'s main memory or RAM. This type of storage device allows for fast access to the stored data.
MSM5117405F-60J3-7 is a 64 Mbit CMOS Synchronous DRAM (SDRAM) device. It consists of 1,048,576 words consisting of 8 bits each and is organized as 137,438 subarrays of 64-bit words. This device is designed with a high-speed burst architecture and provides a random access memory with a high data transfer rate. It provides a single-clock edge data-out feature and supports 1.8V and 3.3V power supply. This device is suitable for applications such as high-performance graphics, digital-video recorder systems, and gaming-console memory.
The working principle of MSM5117405F-60J3-7 is that each memory cell in it is a combinational logic, which means it is both an SRAM (Static Random Access Memory) and a DRAM (Dynamic Random Access Memory). It is organized into a series of addressable memory cells, each containing a certain amount of information which is accessible at different times. The memory cells are connected by a set of two wires which carry the data between them. The data can be stored in the memory cell or retrieved from it. When the data is stored, the address is given and it is stored in the cell, and when data is retrieved, the address is provided and the cell is accessed.
The MSM5117405F-60J3-7 SDRAM device is most useful in applications that require high-speed data access. It can also be used in systems that require maximum memory space and high data rates. This type of memory is also ideal for systems that require low power consumption, since the amount of power used by the device is low.
In conclusion, MSM5117405F-60J3-7 is a 64 Mbit CMOS Synchronous DRAM (SDRAM) device that can be used for applications such as graphics, digital-video recorder systems, and gaming-console memory. It is organized into a series of addressable memory cells, each containing a certain amount of information which is accessible at different times. The device is designed with a high-speed burst architecture and provides a random access memory with a high data transfer rate. It also supports 1.8V and 3.3V power supply. The working principle of the device is a combination of SRAM and DRAM, where the memory cells are connected by a set of two wires. With its high-speed data access, low power consumption and maximum memory space, MSM5117405F-60J3-7 is an ideal choice for various RAM modules.
The specific data is subject to PDF, and the above content is for reference
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