MSM51V17400F-60TDKX

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Memory devices have been widely employed across various industries in order to support the multiple components of electronic systems. The MSM51V17400F-60TDKX is a Functional DRAM, dynamic random access memory, developed by Toshiba through the application of their cutting-edge BiCMOS technology. This device provides the significant feature of momentary data retention for up to 10 years, making it highly suitable for a range of applications, such as aerospace and industrial systems.

The MSM51V17400F-60TDKX consists of two main components, logic and memory. The logic portion is essentially a conventional 3-state logic circuit, and includes RAM control logic, address decode logic and data output logic. The memory portion consists of 4 MB, arranged in 4096 words by 1024 bits each, of non-volatile Ferroelectric Memory (FRAM) cells. This architecture allows multiple external devices, including CPUs, memory decoders and data banks, to access and store data within the device evenly.

With the support of the newly developed BiCMOS technology, the MSM51V17400F-60TDKX provides superior performance compared to other memory devices in terms of power consumption and speed. Its logic section has an operating voltage of 0.3 to 5.5V, offering power efficiency and reduced power consumption. The memory section also has a lower operating voltage, 1.8 to 3V, meaning it consumes up to 75% less power than conventional designs. Furthermore, the device can operate at speed of up to 10ns, significantly faster than most other memories.

The MSM51V17400F-60TDKX is an ideal solution for applications that require long data retention, such as industrial systems or aerospace controllers. Its high speed and low power consumption also make it a great choice for embedded applications. By taking advantage of the superior performance of the MSM51V17400F-60TDKX, users can ensure their complex systems are always running reliably and efficiently.

The MSM51V17400F-60TDKX is designed with several features that maximize the convenience and safety of the user. To ensure data security, the memory array is protected by a special Write Protect (WP) line which prevents malicious code from tampering with the data. Additionally, the device is equipped with a built-in watchdog timer and interrupt function, which allows the user to monitor and detect when an error occurs within the system.

In conclusion, the MSM51V17400F-60TDKX is an excellent memory device for a range of applications. With the support of cutting-edge BiCMOS technology, it offers a high data retention period of up to 10 years, low power consumption and a fast operating speed. The device also includes several security and monitoring features, making it suitable to be employed across various industrial fields. It is a solution that provides superior performance and reliability.

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