MSM51V17405F-60T3-K Allicdata Electronics
Allicdata Part #:

MSM51V17405F-60T3-K-ND

Manufacturer Part#:

MSM51V17405F-60T3-K

Price: $ 4.77
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC DRAM 16M PARALLEL 26TSOP
More Detail: DRAM Memory IC 16Mb (4M x 4) Parallel 30ns 26-TSO...
DataSheet: MSM51V17405F-60T3-K datasheetMSM51V17405F-60T3-K Datasheet/PDF
Quantity: 1971
1 +: $ 4.34070
Stock 1971Can Ship Immediately
$ 4.77
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 16Mb (4M x 4)
Write Cycle Time - Word, Page: 104ns
Access Time: 30ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: --
Supplier Device Package: 26-TSOP
Base Part Number: MSM5*
Description

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Memory refers to the components in a computing device that store data. It is divided into two categories in terms of the form of storage: permanent storage and temporary storage. MSM51V17405F-60T3-K is a type of memory that falls into the category of permanent storage.

MSM51V17405F-60T3-K, is a type of non-volatile dynamic random access memory (NVRAM) produced by Mitsubishi. It is commonly used as main memory for PCs, industrial computers, embedded systems, peripherals and other devices. The memory is composed of a static random access memory (SRAM) cell and a control circuit. The control circuit must be used for power loss protection and for data preservation over time.

It offers a wide operating temperature range from -40°C to +85°C and supports a number of compatible software and hardware environments. It has a low operating current and a wide supply voltage range. The design has been optimized to ensure that the device operates efficiently and reliably in a wide range of conditions. It is composed of a non-volatile RAM integrated with static RAM and a 3-V lithium cell.

MSM51V17405F-60T3-K has a variety of applications including industrial machine control, process control, motor control, automation and other applications where data needs to be stored permanently. The device is also used as a buffer memory in networks, as a memory for encryption hardware, as well as for other applications.

MSM51V17405F-60T3-K works by using a combination of SRAM and Non-Volatile RAM (NVRAM) technology. The SRAM stores information for as long as the device is powered, and can be read and written quickly. The data stored in the SRAM will be lost when power is removed, which is why the NVRAM is needed for data preservation. The NVRAM can be programmed and read without the need for an external power source, and is capable of retaining data even when power is removed. The combination of these two technologies ensures that the device is able to support a wide variety of applications.

MSM51V17405F-60T3-K is an ideal choice for applications that require a non-volatile storage device with a wide temperature range and low power requirements. This type of memory is capable of providing reliable, long-term data storage with a low risk of data loss. The device is also ideal for applications where power loss is an issue, as it is able to store data in the event of power outage.

The specific data is subject to PDF, and the above content is for reference

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