Allicdata Part #: | MSM5412222B-25TK-MTL-ND |
Manufacturer Part#: |
MSM5412222B-25TK-MTL |
Price: | $ 5.66 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC FRAM 3M PARALLEL 44TSOP |
More Detail: | FRAM (Ferroelectric RAM) Memory IC 3Mb (256K x 12)... |
DataSheet: | MSM5412222B-25TK-MTL Datasheet/PDF |
Quantity: | 1000 |
1350 +: | $ 5.13843 |
Series: | -- |
Packaging: | Tray |
Part Status: | Not For New Designs |
Memory Type: | Non-Volatile |
Memory Format: | FRAM |
Technology: | FRAM (Ferroelectric RAM) |
Memory Size: | 3Mb (256K x 12) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 23ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP |
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MSM5412222B-25TK-MTL Memory Application Field and Working Principle:
The MSM5412222B-25TK-MTL memory is a type of dynamic random-access memory (DRAM). It is manufactured by Japan-based Mitsubishi semiconductor and is designed for record keeping, analytical applications and transferring of memory from a system. This type of memory is often found in computers and laptop computers.
The MSM5412222B-25TK-MTL memory is a double-layer memory, providing a total memory size of 2,500 megabytes. It is composed of individual memory chips, each with a capacity of 512 megabytes. The memory provides a maximum burst data rate of 25 megahertz and a max cycle time of 40 nanoseconds. It also contains various instructions, such as Prefetch, Copyback and Bus Inhibit, to help maximize its efficiency.
The MSM5412222B-25TK-MTL memory is organized in banks, allowing one memory bank to access data from other memory banks in the same clock cycle. This interbank transfer rate is enhanced by Mitsubishi\'s HyperFunction Bus, which allows faster communication and increased data transfer rates between the memory banks. As a result, the MSM5412222B-25TK-MTL memory offers unbeatable access times and low power consumption.
The MSM5412222B-25TK-MTL memory is designed for a wide range of uses, including personal computers, laptops, gaming consoles, mobile devices and embedded systems. The memory is also used for record keeping and analytical applications, such as large-scale databases and information analysis. It can also be used in high-performance computing applications, where relatively large amounts of data need to be constantly accessed and updated.
The MSM5412222B-25TK-MTL memory works on the principle of dynamic random access memories (DRAMs). DRAMs allow high speed data access and storage and the MSM5412222B-25TK-MTL memory is no exception. It uses capacitors to store electrical charges representing the data, and the data is then read and written with the help of transistors. The capacitors used in the MSM5412222B-25TK-MTL memory are able to sustain their electrical charge for about 8 to 10 years, making them suitable for long-term data storage.
The MSM5412222B-25TK-MTL memory is a reliable, high-performance type of memory. It is suitable for a wide range of applications, and is widely used in computers and other electronic devices. Due to its fast data access rates and low power consumption, the memory is ideal for applications where fast data retrieval is required.
The specific data is subject to PDF, and the above content is for reference
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