MT25QL01GBBA8E12-1SIT TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	1Gb (128M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	8ms, 2.8ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-T-PBGA (6x8)

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Introduction

MT25QL01GBBA8E12-1SIT is a 64-Mb NOR Flash Memory device from Micron Technology. It is a member of Micron’s Quad-SPI NOR family of devices, which offer superior performance and cost advantages. This device integrates a single Quad-SPI NOR die and is available in multiple package options, including BGA, SOP, and WSON.

Features

The MT25QL01GBBA8E12-1SIT device is a feature-rich NOR Flash Memory with a high-performance architecture that provides superior performance in both read and write speed. The device’s Quad-SPI provides an effective data transfer rate of up to 104 MHz with a maximum of 108 MHz, while its development support (provided by Micron) greatly reduces the time and costs associated with development.The MT25QL01GBBA8E12-1SIT device offers several additional features, such as:

• Up to 64-Mb of data storage capacity
• Supports Quad-SPI Fast Read Interface
• Supports Serial Peripheral Interface (SPI) and Quad-SPI Interface
• 4 Cycles per Byte supported
• Advanced Multi-I/O Command Set
• On-board Clock Generator with programmable voltage control
• Secure control operations
• Temperature range: –20 to 70°C

Application

MT25QL01GBBA8E12-1SIT offers features which make it suitable for a variety of applications, such as:

• Digital video cameras
• Consumer electronics
• Network/Telecom equipment
• Storage devices
• Portable navigation systems
• Secure Voice over IP phones
• Medical devices
• Surveillance systems

It is also widely used in industrial, automotive and other various applications.

Working Principle

The MT25QL01GBBA8E12-1SIT NOR Flash Memory works on a simple principle: when power is applied, the device manufactures electrons on all of its floating gates, resulting in different amounts of current flowing through the channel. This current is the read/write signal which is used to access the memory cells located on the internal chip. When no power is present, the electrons are still retained in the memory cells since they are surrounded by the dielectric layer of the floating gate, which acts as an energy barrier. This is why the MT25QL01GBBA8E12-1SIT device is known for its high data retention and durability.The MT25QL01GBBA8E12-1SIT NOR Flash Memory is manufactured using a advanced version of the CMOS process, which enables the device to provide the highest levels of performance and reliability.

Conclusion

The MT25QL01GBBA8E12-1SIT NOR Flash Memory from Micron Technology is a high-performance device that provides 64-Mb of memory capacity and advanced features. Its Quad-SPI NOR architecture provides a reliable and high-speed interface, while its advanced CMOS process enables the device to deliver outstanding read and write performance. Add to that its low power consumption and temperature range, and you have a memory device that is suitable for a variety of applications.

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