MT25QL512ABB8E12-0AAT TR Allicdata Electronics
Allicdata Part #:

MT25QL512ABB8E12-0AATTR-ND

Manufacturer Part#:

MT25QL512ABB8E12-0AAT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512M SPI 24TPBGA
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8) SPI 133MHz ...
DataSheet: MT25QL512ABB8E12-0AAT TR datasheetMT25QL512ABB8E12-0AAT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q100
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)
Description

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Memory is a critical component in a wide range of electronic applications, allowing users to store and retrieve large amounts of data. The MT25QL512ABB8E12-0AAT is a high performance Serial NOR Flash memory used in embedded systems in order to provide a large storage capacity while consuming very little power. With its low power consumption and high density, this type of memory is commonly used in applications such as automotive, industrial and IoT.

The MT25QL512ABB8E12-0AAT uses a nonvolatile CMOS memory technology called Serial Flash, which is a type of flash memory designed to store data electronically in a single-level cell (SLC) format. This type of memory offers a solution for applications that require fast and reliable data storage, as well as a low-power solution for systems that are constrained by power budget.

The memory chip features a scalable interface, which allows users to read, write and erase data from the Flash memory at high speeds. The MT25QL512ABB8E12-0AAT features a Quad SPI Flash interface, which can support data transfer rates up to 133Mhz. This Flash memory also supports an extended endurance of more than 10,000 write/erase cycles, so users can trust that the stored data will remain intact over time.

The MT25QL512ABB8E12-0AAT also offers a robust architecture, which is well suited for rugged and mission critical applications. This design is capable of operating over a wide temperature range (-40°C to 105°C) and is qualified to the stringent automotive industry standards AEC-Q100 grade 0 and HIDL 100. This level of quality means that the MT25QL512ABB8E12-0AAT is well suited for use in automotive applications that require an increased safety level.

At the heart of the MT25QL512ABB8E12-0AAT is its working principle, which is based on the principle of storing information in a floating gate via an oxide layer of the Floating Gate Transistor (FGT). Data is written and retrieved from the chip using a programmed data flow of electrons. The data is stored on the FGT by the application of electrical charge and is locked until erased by reverse polarity of the electric current. This allows users to reliably store and retrieve data from the memory chip.

The MT25QL512ABB8E12-0AAT is a low power, high capacity solution that is perfect for applications such as automotive, industrial and IoT. With its robust architecture and extended endurance, this type of memory is designed to provide reliable data storage for a wide range of applications. As a result, the MT25QL512ABB8E12-0AAT is a great choice for those who need reliable, low power memory solutions.

The specific data is subject to PDF, and the above content is for reference

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