MT25TL01GHBB8E12-0AAT TR

Series:	Automotive, AEC-Q100
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	1Gb (128M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	8ms, 2.8ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-T-PBGA (6x8)

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Memories are essential components in a digital system, playing a variety of roles from storing information and data structures to managing the sequencing and timing of operation. MT25TL01GHBB8E12-0AAT TR is a non-volatile memory integrated circuit (IC) developed by Macronix Corporation. It is a general purpose memory with a wide array of applications in many industries, including automotive, industrial, consumer electronics, medicinal, and so on. This memory device features an advanced security lock-down that prevents illegal access, firmware manipulation, and data piracy.The MT25TL01GHBB8E12-0AAT TR includes two key memory chips: the advanced flash memory and the multi-bit rate phase-change memory. The former is used in a wide variety of applications, while the latter is used primarily as a fast random read/write system, allowing random access to the information stored in the device. The device also contains an embedded error correction code (ECC) engine, supporting advanced level of error detection and correction. This makes it suitable for applications where data integrity is critical, such as in storing important medical records. The MT25TL01GHBB8E12-0AAT TR makes use of multi-level cell (MLC) technology for its non-volatile memory cells. In MLC devices, each cell stores multiple bits of data (2-4 depending on the specific device) which are digitally encoded as “0” or “1”. Data is read out of the memory cells using voltage pulses to determine which bits of data are present. Also, the cells can be permanently programmed to unusable states, making the device erasable, rewriteable and non-volatile.The MT25TL01GHBB8E12-0AAT TR operates at a wide voltage range, from 1.5V to 3.3V, making it suitable for both low-power and high-performance applications. It also has a built-in low-power and high-performance modes, allowing for better power efficiency. The device is designed to sustain more than 10000 erase-program cycles and has a retention time of up to 20 years.The robust design of the MT25TL01GHBB8E12-0AAT TR ensures reliable operation in many operating temperatures, ranging from -40 to 85°C. The device also features a dielectric isolation technology which makes it immune to noise and other electrical interferences, thus making it suitable for use in harsh or industrial environments.In conclusion, the MT25TL01GHBB8E12-0AAT TR is a versatile non-volatile memory integrated circuit that is suitable for a variety of applications in various industries. It has an advanced security system, built-in ECC engine, and a wide operating temperature range. With its reliable performance, low power consumption, and excellent data integrity, the MT25TL01GHBB8E12-0AAT TR is a great choice for any demanding non-volatile memory application.

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