MT25TL01GHBB8E12-0SIT TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	1Gb (128M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	8ms, 2.8ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-T-PBGA (6x8)

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Introduction to Memory

Memory is a crucial component of any computing system, and is necessary for a computer to access data and applications. The type of memory used in a digital system will vary depending on the specific needs of the system, but all memory chips operate in basically the same way, using binary logic to store, read and write data.

What is MT25TL01GHBB8E12-0SIT TR?

MT25TL01GHBB8E12-0SIT TR is a memory device manufactured by Micron Technology that stores electronic data. It is a 2Gb (256Mb x8) Quad Serial SPI Flash memory device, which means that it is a Quad SPI Flash Memory device containing 4 separate, individually addressable serial buses (or channels) supporting 25MHz clock speeds. All 4 channels can be used to transfer data in read and write operations.

Application Field

The MT25TL01G is designed for a range of applications, including embedded memory applications in industrial, automotive and consumer markets. Due to its low power consumption, it is ideal for constrained power and space systems.The chip supports various data speeds, making it suitable for more bandwidth-demanding tasks, such as live streaming audio/video. Additionally, the device is capable of both on-command and on-demand read and write operations, which makes it suitable for the usage in automotive, industrial and consumer applications.

Working Principle

The MT25TL01GHBB8E12-0SIT TR memory chip operates by storing information as binary bits in its semiconductor memory cells. Binary bits, otherwise known as digital bits, are strings of ones and zeroes. When the memory cell is charged, it is interpreted as a one, and when the memory cell is discharged, it is interpreted as a zero. To store data in the memory chip, the chip is subjected to voltage pulses. When a voltage pulse is sent to the memory chip, the semiconductor memory cells are charged, and when a low voltage is sent, the semiconductor memory cells are discharged. This process is used to store coherent data, as the pattern of voltage pulses can be ‘read’ by the memory chip in order to interpret the data stored in the form of a binary 0 or 1. On the other hand, to retrieve data from the memory chip, a voltage is sent to the chip which causes the memory cells to change their charge, and thus the stored binary data is retrieved. The chip then interprets this binary data as the stored data that it was reading.

Conclusion

The MT25TL01GHBB8E12-0SIT TR memory chip is designed for a variety of industrial, automotive and consumer applications. The chip operates by storing information in binary form, using its semiconductor memory cells to store ones and zeroes. Data is stored in the memory chip using voltage pulses, and to retrieve the data an appropriate voltage is sent to the chip, which causes the memory cells to change their charge and thus the data stored in the form of a binary 0 or 1 is retrieved.

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