MT25QU128ABA8E14-1SIT TR Allicdata Electronics
Allicdata Part #:

MT25QU128ABA8E14-1SITTR-ND

Manufacturer Part#:

MT25QU128ABA8E14-1SIT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 24TPBGA
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI 133MHz ...
DataSheet: MT25QU128ABA8E14-1SIT TR datasheetMT25QU128ABA8E14-1SIT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)
Description

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Memory technology is an important part of computer technology, and its application field and working principle are important to computer industry. MT25QU128ABA8E14-1SIT TR, a type of Flash memory, is one example of memory technology used in computers today. This paper will discuss the application field and working principle of MT25QU128ABA8E14-1SIT TR.

MT25QU128ABA8E14-1SIT TR is a type of NAND Flash memory used for various applications in the semiconductor industry. It is characterized by its small form factor, high speed and low power consumption. The MT25QU128ABA8E14-1SIT TR is capable of storing up to 256MB of data without requiring any external memory components. As such, it is ideal for applications where data needs to be retrieved quickly, such as in digital cameras, phones and digital audio players. Additionally, it is widely used in embedded systems and automotive applications.

The working principle of MT25QU128ABA8E14-1SIT TR would be best explained by diagram. The device comprises of four NAND gates, a sense amplifier and an I/O cell. The NAND gates are connected together in a series so that each NAND gate serves the function of reading the state of the memory and performing a logical operation onto the data stored in the memory. The NAND gate is usually configured to read, write, erase or protect the memory. The sense amplifier acts as a buffer to maintain the data integrity as the I/O cell transfers the data between the memory and the NAND gates.

The I/O cell, is responsible for transferring the data from the memory to the NAND gates. The I/O cell consists of a row and column decoder, control logic and a multiplexer. The row decoder determines the state of the memory cell, and the column decoder determines the state of the output. The control logic is responsible for controlling the row and column address, and the multiplexer is used to route the control signals.

MT25QU128ABA8E14-1SIT TR further improves its speed and power efficiency by introducing micro-code. Micro-code is a small section of executable code that is used to control the NAND gates and the rest of the memory. Micro-code enables the device to read and write memory without having to go through each bit of data individually. This speed improvement allows for faster access of data, and also reduces the amount of power consumed.

In summary, MT25QU128ABA8E14-1SIT TR is a type of NAND Flash memory whose primary purpose is for data storage in the semiconductor industry. It is characterized by its small form factor, high speed and low power consumption. The device is composed of four NAND gates, a sense amplifier and an I/O cell. The NAND gates and I/O cell work together to read and write data, while the sense amplifier acts as a buffer and maintains data integrity. Furthermore, the introduction of micro-code further improves the memory’s speed and power efficiency. The MT25QU128ABA8E14-1SIT TR is therefore an ideal choice for applications that require fast data retrieval, such as digital cameras, phones and digital audio players.

The specific data is subject to PDF, and the above content is for reference

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