MT25TL01GBBB8E12-0AAT TR Allicdata Electronics
Allicdata Part #:

MT25TL01GBBB8E12-0AATTR-ND

Manufacturer Part#:

MT25TL01GBBB8E12-0AAT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1G SPI 133MHZ 24TPBGA
More Detail: FLASH - NOR Memory IC 1Gb (128M x 8) SPI 133MHz 2...
DataSheet: MT25TL01GBBB8E12-0AAT TR datasheetMT25TL01GBBB8E12-0AAT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q100
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

As we become ever more dependent on the use of electronic and digital technology, the need for high-performance memories continues to increase. The memory technology continues to evolve and new products are coming to market that offer extended capabilities. MT25TL01GBBB8E12-0AAT TR is one such product that is gaining increasing popularity due to its wide range of applications and superior capability. Here we will explore the features, capabilities and applications of this product as well as its working principle.

The MT25TL01GBBB8E12-0AAT TR is one of the latest products to be released by Micron Technology Inc. It is a 1Gb product that is widely used for applications that demand higher performance than standard memories. This product is used in a wide range of applications from automotive to healthcare. It has a built-in error correction mechanism which makes this product one of the best in terms of reliability and accuracy.

This product is designed to be a multi-die, multi-layer memory chip. This makes it ideal for highly space constrained areas where other solutions such as DRAM are not feasible. The MT25TL01GBBB8E12-0AAT TR uses two dies – one composed of four 64Mb layers and the other composed of two 16Mb layers – to make a single 1 Gb die. This allows for a higher performance level than single die solutions, as there is less latency between dies.

A major advantage of the MT25TL01GBBB8E12-0AAT TR is that it is much faster than traditional memories. It has an impressive 25ns speed for random address reads/writes and 10ns speed for sequential reads/writes. This makes it up to 8 times faster than standard memory solutions. In addition to its speed, it has a much lower power consumption than most traditional memory solutions, making it ideal for applications that require low-power solutions.

The MT25TL01GBBB8E12-0AAT TR is also a very secure memory solution with multiple layers of protection. It uses secure erase and rewrite technology which makes it difficult to corrupt or tamper with data once it is written. This makes it ideal for applications where sensitive data is processed. In addition to its security features, it has a low soft-error rate which makes it highly reliable.

The working principle of MT25TL01GBBB8E12-0AAT TR is based on the use of non-volatile memory cells and a logic controller. The logic controller is responsible for controlling the memory cells and ensuring their proper functioning. The main functions of the controller are to control the data writing, erasing, reading, and programming processes. The controller is responsible for controlling the data flow and ensuring that the data is written, read and erased in a correct and secure manner. It also keeps track of the elements

The specific data is subject to PDF, and the above content is for reference

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