MT25QU01GBBB8E12-0AAT TR

Series:	Automotive, AEC-Q100
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	1Gb (128M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	8ms, 2.8ms
Memory Interface:	SPI
Voltage - Supply:	1.7 V ~ 2 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-T-PBGA (6x8)

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Introduction to MT25QU01GBBB8E12-0AAT TR memory

Memory is the foundation of today’s computing and data storage technology. With the ever increasing demand for higher data rates, better efficiency and improved reliability, memories have become an even more vital part of electronics and computing. The MT25QU01GBBB8E12-0AAT TR is a quad SPI NOR Flash memory from Cypress Semiconductor offering high performance, low power consumption and extensive memory capacities for a wide range of applications.

Overview of MT25QU01GBBB8E12-0AAT TR

The MT25QU01GBBB8E12-0AAT TR is a Quad SPI NOR Flash memory offering up to 1Gbit of storage capacity in a single die. It is available in a 48-balls, 4×9mm package, making it an ideal choice for densely populated and low profile applications. With its 4K page size, it provides high sequential read access times and can store up to 128Mwords of user data. The memory is configured as two separate 512Mbit banks, allowing for both simultaneous reading and writing capabilities.The MT25QU01GBBB8E12-0AAT TR features a robust internal architecture, which includes error detection and correction (EDC) architecture and an integrated wear-leveling system. This ensures data reliability and long device life. Further, the device has a built-in voltage regulator that enables 1.8V and 3.3V operation. This makes it suitable for a wide range of industrial and consumer applications.

MT25QU01GBBB8E12-0AAT TR Features

The MT25QU01GBBB8E12-0AAT TR has several features that make it an ideal choice for applications requiring high performance, low power and advanced capabilities. •High performance: The MT25QU01GBBB8E12-0AAT TR features a 20-MHz maximum clock frequency, providing quick access times. With 4K page programming, a read speed of up to 101 MB/s can be achieved. •Low power consumption: The device can be operated at 3.3V and 1.8V, enabling low power consumption in embedded applications. •High reliability: The MT25QU01GBBB8E12-0AAT TR incorporates high reliability features such as error-correction code (ECC) and wear-leveling functions, ensuring long device life. •Flexible programming: The device offers a range of programming modes for a wide range of applications and usage. •Compatibility: The MT25QU01GBBB8E12-0AAT TR supports a wide range of software tools and is compatible with most development tools.

MT25QU01GBBB8E12-0AAT TR Applications

The MT25QU01GBBB8E12-0AAT TR is suitable for a range of applications including portable devices, consumer electronics, embedded applications and industrial automation. Here are some of its applications:•Portable devices: The device’s low power consumption and high performance make it an ideal choice for portable devices such as smartphones and tablets. •Consumer Electronics: The memory is suitable for consumer electronics including digital cameras and camcorders. •Embedded Applications: The memory can be used in embedded applications such as home automation, medical instruments, and industrial automation. •Industrial Automation: The high reliability and flexibility of the device make it suitable for use in industrial automation.

MT25QU01GBBB8E12-0AAT TR Working Principle

The MT25QU01GBBB8E12-0AAT TR uses a shift register approach to establish its logic gate. In this type of logic, data is shifted through a shift register, with each bit of data shifting through a logic gate (in this case a NOR gate) that determines whether the output is high or low. The shift register’s output is then used as the device’s data output. The NOR gate works by providing an output that is the logical inverse of the input signals. This means that if the input signal is high, the output will be low, and if the input signal is low, the output will be high. The MT25QU01GBBB8E12-0AAT TR uses this logic to establish its logic state. The device is programmed using a Quad SPI protocol. The protocol consists of four signals: the serial data input (SDI), the serial data output (SDO), the chip select (CS) signal and the clock signal (CLK). When the CS signal is asserted, the data from SDI is shifted into the device and programmed according to the control signals. The data is then clocked out through SDO. The clock signal is used to control the timing of the data transfer.

Conclusion

The MT25QU01GBBB8E12-0AAT TR is a high performance Quad SPI NOR flash memory with up to 1Gbit storage capacity. It is ideal for portable and embedded applications, due to its low power consumption and high reliability. In addition, the device features several programming modes, making it a flexible and reliable memory solution.

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