Allicdata Part #: | MT40A256M16GE-062E:B-ND |
Manufacturer Part#: |
MT40A256M16GE-062E:B |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 96FBGA |
More Detail: | SDRAM - DDR4 Memory IC 4Gb (256M x 16) Parallel 1.... |
DataSheet: | MT40A256M16GE-062E:B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR4 |
Memory Size: | 4Gb (256M x 16) |
Clock Frequency: | 1.6GHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.26 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 96-TFBGA |
Supplier Device Package: | 96-FBGA (14x9) |
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Memory
MT40A256M16GE-062E:B is a dynamic random access memory (DRAM) module. It is composed of a 256 megabit (an entire memory chip) and eight dual in-line memory modules (DIMMs). DRAMs are common in the world of electronics, used in many devices, including laptops and desktop PCs.
A DRAM module is composed of an array of memory cells, arranged in a square grid, divided into smaller segments known as banks. Each cell consists of a capacitor and a transistor. Electrons are stored on the capacitor, and each cell can store a single bit of information. The information stored in each cell is represented by either having or not having an electric charge. This charge is ignited by an electronic pulse and is maintained by the transistor.
The working principle of this module is relatively straightforward, though the technicalities of it are more complicated. The module works by refreshing the data stored, similar to how a computer cache refreshes. As the memory cells discharge, the cells must be re-charged with new data, allowing the module to maintain a certain amount of data it previously had. This data is written to the memory cells when the module receives a “write” command. The data is retrieved by reading the charge of the cells and sending it back, allowing the user to access the data.
DRAM modules are commonly used in a variety of applications, from consumer electronics, such as computers and mobile devices, to more specialized embedded applications. The MT40A256M16GE-062E:B can be used in devices such as point of sale terminals, gaming consoles, digital video recorders, server storage systems, and so on. Thanks to its small size and high performance, the module is also well-suited for energy-sensitive applications, such as those in the automotive, medical, and industrial sectors. Additionally, the module is highly reliable, reliable under a temperature range of 0°C - 70°C, making it suitable for even more applications.
In summary, the MT40A256M16GE-062E:B is a dynamic random access memory (DRAM) module. It is composed of a 256 megabit (an entire memory chip) and eight dual in-line memory modules (DIMMs). DRAMs are used in a variety of applications, such as consumer electronics, medical, and industrial applications. Its small size, high performance, and reliable performance make the module well-suited for energy-sensitive applications. Finally, the module works by refreshing the data stored, similar to how a computer cache refreshes.
The specific data is subject to PDF, and the above content is for reference
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MT40A1G16HBA-083E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 96FB... |
MT40A1G8WE-075E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A256M16GE-062E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT40A256M16GE-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT40A2G8FSE-093E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 78FB... |
MT40A4G4NRE-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 78FB... |
MT40A512M16HA-083E IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16HA-083E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16JY-075E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M8RH-062E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A512M8RH-075E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A512M8RH-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A512M8RH-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A1G8WE-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A512M16JY-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A1G16WBU-083E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 96FB... |
MT40A1G8WE-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G8WE-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G8WE-083E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G8WE-083E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A256M16GE-083E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT40A512M16JY-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16JY-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16JY-083E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
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