Allicdata Part #: | MT40A2G8FSE-093E:ATR-ND |
Manufacturer Part#: |
MT40A2G8FSE-093E:A TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G PARALLEL 78FBGA |
More Detail: | SDRAM - DDR4 Memory IC 16Gb (2G x 8) Parallel 1067... |
DataSheet: | MT40A2G8FSE-093E:A TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR4 |
Memory Size: | 16Gb (2G x 8) |
Clock Frequency: | 1067MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.26 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 78-TFBGA |
Supplier Device Package: | 78-FBGA (9.5x13) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is the key component of computers, and the advancements of computing technology has drastically increased the amount of memory required by computer systems. As a result, the use of specialized memory types, such as TR technology, has become common in computers. The MT40A2G8FSE-093E is a type of TR memory that is widely used in a variety of applications. In this article, we will discuss the application field and working principle of MT40A2G8FSE-093E.
The MT40A2G8FSE-093E is a type of TR (thin-film transistor) memory that is designed for use in embedded systems and mobile devices. It utilizes a proprietary technology developed by the Mitsubishi company, making it a reliable and reliable form of memory. It is most commonly used in digital cameras and mobile devices, where it provides fast and reliable access to data. In addition, it also has applications in other areas such as automotive and telecommunications.
The working principle of the MT40A2G8FSE-093E can be explained as follows. The memory consists of a thin-film transistor, or TR, which is embedded between two pieces of silicon dioxide. The TR technology allows for small electrical currents to pass through the transistor in order to store data in a non-volatile manner. This means that the data is permanent and will not be lost when the power is turned off. The data stored in the TR is then converted into digital signals, which are then sent to other components in the system.
The MT40A2G8FSE-093E is a type of non-volatile memory, meaning that it can retain its data even when the power is turned off or the system is unplugged. This type of memory is also very reliable, and it can withstand temperatures up to 120°C with no significant data or performance loss. In addition, due to its low power consumption, it has become a popular choice for embedded systems and mobile devices. It is also known for its high performance, making it an ideal choice for applications where speed is critical.
In conclusion, the MT40A2G8FSE-093E is a type of TR memory that is widely used in a variety of applications. The memory utilizes a proprietary technology developed by the Mitsubishi company, making it a reliable and reliable form of memory. Its working principle consists of the use of a thin-film transistor which is embedded between two pieces of silicon dioxide. This allows for small electrical currents to pass through the transistor in order to store data in a non-volatile manner. This type of memory is known for its high performance and reliability, making it a popular choice for embedded systems and mobile devices.
The specific data is subject to PDF, and the above content is for reference
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MT40A2G4PM-083E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
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MT40A1G8WE-075E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A256M16GE-062E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT40A256M16GE-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT40A2G8FSE-093E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 78FB... |
MT40A4G4NRE-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 78FB... |
MT40A512M16HA-083E IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16HA-083E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16JY-075E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M8RH-062E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A512M8RH-075E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A512M8RH-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A512M8RH-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A1G8WE-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A512M16JY-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A1G16WBU-083E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 96FB... |
MT40A1G8WE-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G8WE-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G8WE-083E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G8WE-083E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A256M16GE-083E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT40A512M16JY-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16JY-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16JY-083E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
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