
Allicdata Part #: | MT41J128M16JT-107G:K-ND |
Manufacturer Part#: |
MT41J128M16JT-107G:K |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 2G PARALLEL 96FBGA |
More Detail: | SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 93... |
DataSheet: | ![]() |
Quantity: | 1000 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | MT41J128M16 |
Supplier Device Package: | 96-FBGA (8x14) |
Package / Case: | 96-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 95°C (TC) |
Voltage - Supply: | 1.425 V ~ 1.575 V |
Memory Interface: | Parallel |
Access Time: | 20ns |
Series: | -- |
Clock Frequency: | 933MHz |
Memory Size: | 2Gb (128M x 16) |
Technology: | SDRAM - DDR3 |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Active |
Packaging: | Tray |
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Memory has played a fundamental role in digital systems since its inception. Its role has only grown in importance in modern digital systems, where embedded systems and small form factor devices are commonplace. The MT41J128M16JT-107G:K is a type of memory device specifically designed for embedded applications and is used in a variety of embedded systems today. In this article, we will examine the application field and working principle of the MT41J128M16JT-107G:K device.
The MT41J128M16JT-107G:K is a type of dynamic random access memory (DRAM) specifically designed for embedded applications and is one of the most popular DRAM devices that are available today. It is an extremely low power device and is ideal for applications that have stringent power constraints. It uses an advanced 8-bank architecture, which enables it to process 8 independent requests in parallel, thus providing higher performance than other DRAM devices.
The application field for the MT41J128M16JT-107G:K is extensive and includes a wide range of embedded systems. It is used in automotive infotainment systems, industrial control systems, wearables, and the Internet of Things (IoT) devices, among others. It is also used in the latest smartphones, tablets, and notebooks. Moreover, due to its low power consumption, this device is ideal for use in mobile devices, where long battery life is an important consideration.
In order to understand the working principle of the MT41J128M16JT-107G:K, one must first understand how DRAM devices work in general. DRAM devices work by storing each bit of data in a memory cell, which is formed by a row and column. When the device is powered up, the cells are charged with a charge and the stored data is read from the cells. When a piece of data is written to a cell, the stored charge is replaced with the new data. When a request is made for data from the memory device, the appropriate row and column of the memory cell is accessed and the stored charge is read from the cell.
What makes the MT41J128M16JT-107G:K unique is its 8-bank architecture, which enables the device to process concurrent requests. This means that when two or more different requests are made to the device, the device can process them simultaneously. This is a great advantage for applications where many different requests are made at the same time, such as in high-speed data processing applications or in multimedia applications.
The MT41J128M16JT-107G:K is a versatile device that can be used in a variety of embedded applications. Its 8-bank architecture, low power consumption, and high performance make it an ideal choice for memory applications where low power consumption and high performance are important considerations. With its versatile capabilities, it is sure to be an important part of many embedded systems for years to come.
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MT41J256M8DA-125:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41K512M4DA-125:K | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J64M16JT-15E IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
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MT41K512M16TNA-125 IT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41K256M16HA-107G:E | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K512M16HA-125 IT:A | Micron Techn... | 82.08 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
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MT41J256M16HA-107:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41J256M8JE-187E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 82FBG... |
MT41K256M16TW-107 M AIT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K512M16HA-107:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41J512M4HX-187E:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J64M16JT-15E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
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MT41J256M8DA-093:K | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J512M8RH-093:E | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41K256M8DA-125:M | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J256M16HA-125:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K2G4TRF-107:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT41K512M16HA-125 AIT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
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