
Allicdata Part #: | MT41K256M16LY-093:N-ND |
Manufacturer Part#: |
MT41K256M16LY-093:N |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 1067MHZ |
More Detail: | SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 1... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3L |
Memory Size: | 4Gb (256M x 16) |
Clock Frequency: | 1067MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.283 V ~ 1.45 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory comprises a broad field of technology and applications that are used in a variety of ways by numerous industries. In particular, the MT41K256M16LY-093:N memory device is a sophisticated and highly efficient memory memory system that is used in multiple markets for its reliability, speed and accuracy.
The MT41K256M16LY-093:N memory device consists of four 16-gigabyte (GB) 1024m x 8-bit double-data-rate (DDR) synchronous dynamic random-access memory (SDRAM) modules. The device operates in both single- and multi-channel configurations, allowing it to be used in multiple parallel applications. The memory operates on a voltage range of 1.35V-1.6V, allowing it to fit various power requirements.
The device has an operating frequency range of up to 1066 Mega Hertz (MHz), providing the capability to transfer data quickly and accurately with little latency. This also allows it to be used in multiple simultaneous applications with minimal latency. Additionally, its error-correcting code (ECC) helps to prevent data loss, which can be a common issue in memory systems.
One of the primary applications of the MT41K256M16LY-093:N is in the server market, where the device is used to increase the speed and accuracy of applications. It is also used in high-performance computing (HPC) and in the storage of data in specialized applications. Additionally, the memory device is used in some consumer electronics applications, such as digital cameras and mobile phones, as well as in embedded systems.
The memory device’s working principle is largely determined by its integrated circuit (IC) technology. The integrated circuit works by transferring data from the processor to the memory and vice-versa. This is done via a process called “clocking”, where the memory is accessed with a pulse of voltage and data is stored in and out of the memory in rapid succession. The MT41K256M16LY-093:N is designed to achieve high clocking speeds, making the device suitable for high-speed and high-performance applications.
The device is constructed with advanced IC technology, providing high-speed, low-power operation and enhanced ECC for optimal data protection. Additionally, its innovative design enables it to operate reliably in multiple parallel and edge configurations, allowing it to be used in various data-intensive applications. This also makes it suitable for extreme environments, such as high-traffic networks or space-constrained systems.
Because of its advantages, the MT41K256M16LY-093:N memory device is highly sought after by a variety of businesses and industries. Its speed, accuracy and reliability make it a reliable solution for many types of applications, whether they are consumer products or server-based systems. As a result, it is a popular choice for memory solutions around the world.
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MT41K512M16HA-125 IT:A | Micron Techn... | 82.08 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41K256M16LY-093:N | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1067M... |
MT41J256M16HA-107:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41J256M8JE-187E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 82FBG... |
MT41K256M16TW-107 M AIT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K512M16HA-107:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41J512M4HX-187E:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J64M16JT-15E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
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MT41J512M8RH-093:E | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41K256M8DA-125:M | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J256M16HA-125:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
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