
Allicdata Part #: | MT41K256M16HA-107G:E-ND |
Manufacturer Part#: |
MT41K256M16HA-107G:E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 96FBGA |
More Detail: | SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 9... |
DataSheet: | ![]() |
Quantity: | 1000 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | MT41K256M16 |
Supplier Device Package: | 96-FBGA (9x14) |
Package / Case: | 96-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 95°C (TC) |
Voltage - Supply: | 1.283 V ~ 1.45 V |
Memory Interface: | Parallel |
Access Time: | 20ns |
Series: | -- |
Clock Frequency: | 933MHz |
Memory Size: | 4Gb (256M x 16) |
Technology: | SDRAM - DDR3L |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory, as the vital element of electronic information device, plays an important role in computing and communication. Depending on the demand, different types of memory are needed, such as DRAM and SDRAM. Among these, MT41K256M16HA-107G:E is one of the widely applied SDRAMs and has been widely used in many applications for its excellent working principle and reliable performance.
The MT41K256M16HA-107G:E is a quad-channel storage device manufactured by Micron Technology. It is a SDRAM designed specifically to provide cost-effective, high-performance spindle memory solutions. It is based on a 16-nanometer process technology, and has a 256Mx16 density and a 64-bit I/O interface. In addition, it offers a nominal speed of 1600Mhz and a 1.2V device operating voltage.
As a widely used SDRAM, MT41K256M16HA-107G:E has many widely application fields, such as data storage, big data analysis, network servers, memory modules, and others. In these applications, the MT41K256M16HA-107G:E can provide cost-effective and high-performance solutions.
In terms of working principle, MT41K256M16HA-107G:E is a synchronous type memory device, which means that it is operated in synchronization with the system clock. Its working principle is based on the concept of memory cells. Each cell has two terminals, namely bit line and word line, and the state of the cell is determined by the charge on these two terminals. In order to read/write the memory data, these two terminals must be electrically isolated. In the case of MT41K256M16HA-107G:E, each cell consists of a single transistor and three capacitors. The transistor is used to isolate the two terminals, while the capacitors serve to store the data in a stable manner.
The MT41K256M16HA-107G:E is designed to be a low-power, cost-effective memory device. It has a write cycle of 2.8ns, a read cycle of 3.2ns and an auto-refresh cycle of 15.6ns. In addition to that, it also supports data transfer speeds of up to 1600Mhz. All these features make MT41K256M16HA-107G:E an ideal choice for memory applications.
In summary, MT41K256M16HA-107G:E is an advanced SDRAM developed by Micron Technology for cost-effective high-performance solutions. It offers a wide range of applications, including data storage, big data analysis, network servers, memory modules and others. Moreover, it features a 16-nanometer process technology, a 256Mx16 density and a 64-bit I/O interface. It has excellent working principle, low-power and fast data transfer speed and wide range of supported speed. All these features make MT41K256M16HA-107G:E an ideal choice for memory applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MT41K128M8JP-15E:G | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41J64M16JT-15E XIT:G | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
MT41K64M16TW-107 AIT:J TR | Micron Techn... | 4.19 $ | 6000 | IC DRAM 1G PARALLEL 96FBG... |
MT41J128M8HX-15E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41J128M16HA-125G:D | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 96FBG... |
MT41J64M16JT-125:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
MT41J256M16RE-15E IT:D | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K512M8DA-107 AAT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41J128M8JP-15E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41K512M8DA-107 AIT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41K64M16TW-125:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 800MH... |
MT41J256M4HX-15E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41J128M16JT-125:K | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 96FBG... |
MT41J256M8DA-125:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41K512M4DA-125:K | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J64M16JT-15E IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
MT41K1G8THE-15E:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT41K256M4DA-107:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41K512M8DA-107 AIT:P | Micron Techn... | 11.68 $ | 235 | IC DRAM 4G PARALLEL 78FBG... |
MT41K512M16TNA-125 IT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41K256M16HA-107G:E | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K512M16HA-125 IT:A | Micron Techn... | 82.08 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41K256M16LY-093:N | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1067M... |
MT41J256M16HA-107:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41J256M8JE-187E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 82FBG... |
MT41K256M16TW-107 M AIT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K512M16HA-107:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41J512M4HX-187E:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J64M16JT-15E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
MT41K1G4THV-15E:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41J128M8JP-15E AIT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41J256M8DA-093:K | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J512M8RH-093:E | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41K256M8DA-125:M | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J256M16HA-125:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K2G4TRF-107:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT41K512M16HA-125 AIT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41K1G8TRF-125:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT41K256M4JP-15E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41K1G4DA-107:P | Micron Techn... | -- | 996 | IC DRAM 4G PARALLEL 78FBG... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

LPDDR3 6G DIE 192MX32Memory IC

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
