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Base Part Number:	MT41K2G4
Supplier Device Package:	78-FBGA (9.5x11.5)
Package / Case:	78-TFBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 95°C (TC)
Voltage - Supply:	1.283 V ~ 1.45 V
Memory Interface:	Parallel
Access Time:	20ns
Series:	--
Clock Frequency:	933MHz
Memory Size:	8Gb (2G x 4)
Technology:	SDRAM - DDR3L
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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Introduction

MT41K2G4TRF-107:E is a type of dynamic random access memory (DRAM) designed for high speed and reliable operation in a variety of embedded, industrial, and consumer applications. The product has a single 1,000-pin ball-grid array (BGA) package, providing 2G-bit storage capacity in a compact form factor. This memory is specifically designed for applications that require low-latency access to data and large volumes of data throughput.

Application Field

MT41K2G4TRF-107:E is suitable for a variety of applications such as digital signal processing, telecommunications, network routers, set-top-boxes, automotive, and other embedded industries. In this memory, data is accessed via a fast 10-bit bus which allows lower latency when compared to a traditional 8-bit data bus. This makes the memory ideal for applications where processing speed and response time are essential, such as in data intensive applications.This memory also has the advantage of being able to store large amounts of data in a compact form factor. This makes it ideal for applications where space is limited but high performance is needed, such as in digital cameras or navigation systems.

Working Principle

The MT41K2G4TRF-107:E works on the principle of capacitive coupling, where energy stored in two concentric electrodes is utilized to store and retrieve data from memory cells. The memory is organized into four 8-bit banks of 128Mb each, providing 2G-bit storage capacity. Data transfer is provided on a 10-bit bus which enables high-speed data transfer.The memory utilizes Error Correction Code (ECC) for data reliability during transmission, and features a Dual Internal Data Path (DIDP) that allows simultaneous access of the four 8-bit banks. The DIDP transfers data between the four memory banks, enabling higher data throughput and greater system performance.

Conclusion

The MT41K2G4TRF-107:E is an ideal solution for a range of embedded and industrial applications where low-latency access, high data throughput, and large memory capacities are required. With its 10-bit bus, Dual Internal Data Path, and Error Correction Code this memory is able to provide reliable and fast operation in demanding applications.

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