MT41J256M16HA-093G:E

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Base Part Number:	MT41J256M16
Supplier Device Package:	96-FBGA (9x14)
Package / Case:	96-TFBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 95°C (TC)
Voltage - Supply:	1.425 V ~ 1.575 V
Memory Interface:	Parallel
Access Time:	20ns
Series:	--
Clock Frequency:	1066MHz
Memory Size:	4Gb (256M x 16)
Technology:	SDRAM - DDR3
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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MT41J256M16HA-093G:E application field and working principleMemory is an integral part of any computer system, used to store information and data. The type of memory used in a system is an important factor in determining its performance and capabilities. MT41J256M16HA-093G:E is a type of Double Data Rate 4 Synchronous Dynamic Random Access Memory (DDR4 SDRAM), developed by Micron Technology. It is a type of high-speed memory used in applications that require large amounts of data to be stored and processed quickly.The MT41J256M16HA-093G:E is a 256 Megabit (32 Megabyte) DDR4 SDRAM memory module, designed for applications that require high data throughput, such as server, network and storage systems. It has a maximum clock speed of 3933MHz and a data rate of 3200 Megabits per second (Mbps). It also has a low power consumption, with a low Voltage Standby mode that reduces power consumption even further.The MT41J256M16HA-093G:E has a number of features that make it particularly suitable for high-performance applications. It has an advanced error-detection, correction and reporting capability, which helps reduce system downtime and improve overall system reliability. It also has an ECC (Error Correcting Code) functionality that helps to detect and correct single-bit errors.The MT41J256M16HA-093G:E is composed of four memory rows of sixteen 256 Megabyte DRAM Chips. The chips are connected in a simple daisy chain configuration, with each chip connected to the previous and next chip through an internal bus. When the memory is accessed, an address is sent to the row and the data is read from the specific row. When the data is written, it is written to the same row. This process is repeated for each row until the command completes.The MT41J256M16HA-093G:E also has a burst architecture, which allows for faster performance. This architecture allows successive read and write commands to access a burst of data from different areas of the memory in quick succession. This is ideal for applications that require large amounts of data to be processed quickly.The MT41J256M16HA-093G:E can be used in a wide range of applications, from home and office computing to gaming and media streaming. It is well-suited to data-intensive tasks such as streaming video, audio and graphics, as well as gaming and multimedia applications. Its low power consumption also makes it ideal for mobile applications, where battery life is a critical factor. Its low ECC rate makes it highly reliable in mission-critical applications, where data accuracy is essential.The MT41J256M16HA-093G:E is a powerful and highly reliable memory solution, offering excellent performance and value for money. Its low power consumption, high ECC rate and burst architecture make it an ideal choice for a variety of applications, from home and office computing to mission-critical applications. With its advanced error detection, correction and reporting capabilities and its impressive clock-speed and data rate, the MT41J256M16HA-093G:E is a powerful and reliable memory solution for a wide range of applications.

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