MT41K1G8RKB-107:N

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Memory technology has played a key part in the computer industry\'s growth and development in modern times. MT41K1G8RKB-107:N is a type of dynamic random access memory (DRAM) that offers high speed and high capacity with low power consumption. It\'s especially popular with mobile computing devices, such as tablets and smartphones, to ensure they operate at optimal performance. In this article, we will take a look at the application field and working principle of MT41K1G8RKB-107:N.

MT41K1G8RKB-107:N is a member of Micron\'s Mobile LPDDR4x memory family. This provides an ultimate combination of high speed, high capacity, and low power consumption for mobile computing devices. With its 8GB capacity, MT41K1G8RKB-107:N supports up to 16GB in a single multi-chip package (MCP). It also features a low-voltage I/O and advanced features like dynamic self-refresh and self-temperature monitoring to ensure optimal performance.

MT41K1G8RKB-107:N is widely used in mobile devices like tablets, smartphones, and mobile workstations. It\'s also used in notebooks and ultra-thin laptops for improved performance and energy efficiency. Additionally, it can be found in printers and jet drives, audio-visual equipment, automotive applications, and various industrial machinery.

When it comes to working principle, MT41K1G8RKB-107:N is a DRAM based device that stores bits in cells formed from an array of capacitors and transistors. It uses a simple circuit consisting of a transistor and capacitor for each bit, which works by storing and refreshing the data charge stored in each cell. The transistor acts as a switch to control the current flow and the capacitor stores the data charge. As the capacitor\'s charge is constantly being discharged, the data needs to be periodically refreshed to ensure its accuracy.

The device also features an advanced memory feature known as Dynamic Self-Refresh (DSR). This feature automatically triggers the refresh cycle when the voltage level of the device\'s I/O track falls below a certain threshold. This helps to ensure the data stays accurate, even when the device is not in use. It also helps to reduce power consumption as the device will consume less power when in its inactive state.

In addition, MT41K1G8RKB-107:N has an advanced self-temperature monitoring system which helps in assessing the temperature conditions of the device. This feature helps to prevent data loss and improves the stability of the device by mitigating temperature problems. The device also has fast data transfer rates, up to 10 times faster than conventional memory.

Overall, MT41K1G8RKB-107:N is an excellent choice for users who demand high performance and energy efficiency from their mobile computing devices. It is a highly advanced DRAM based device that offers higher capacity, faster speeds, and advanced features such as dynamic self-refresh and self-temperature monitoring. It is also widely used in a variety of applications, from tablets and smartphones to printers and jet drives.

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