
Allicdata Part #: | MT41K256M16TW-125:P-ND |
Manufacturer Part#: |
MT41K256M16TW-125:P |
Price: | $ 18.96 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 800MHZ |
More Detail: | SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 8... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 18.95830 |
10 +: | $ 16.43060 |
100 +: | $ 13.27080 |
1000 +: | $ 12.63890 |
10000 +: | $ 12.00690 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3L |
Memory Size: | 4Gb (256M x 16) |
Clock Frequency: | 800MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.283 V ~ 1.45 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
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MT41K256M16TW-125:P Application Field and Working PrincipleMT41K256M16TW-125:P is a type of memory developed by Micron specifically designed for enterprise applications. It is one of the most versatile types of memory, with features like high bandwidth, high endurance, and low power. The memory is ideal for enterprise applications, such as data storage, virtualization, and multimedia applications for high performance and scalability.
The MT41K256M16TW-125:P is a dual-channel memory that can be configured as 8-bit, 16-bit, 32-bit, and 64-bit words. Each channel supports up to four data words, for a total of eight. The memory can be operated in either synchronous or asynchronous mode and supports a variety of signaling protocols, including DDR2, DDR3, and DDR4. The memory can be clocked up to 1600MHz, providing up to 25.6 gigabytes (GB) per second of data transfer rate.
The MT41K256M16TW-125:P memory uses a Dynamic RAM (DRAM) architecture, which is a type of random access memory (RAM) that stores data in a non-volatile or “dynamic” state. DRAM stores data by utilizing a semiconductor that has a charge stored in it. This charge can then be manipulated to store and retrieve data. When the semiconductor needs to store a new data bit, the charge is reduced (known as “refreshing”). When the semiconductor needs to access a data bit, the charge is increased (known as “reading”).
The MT41K256M16TW-125:P memory also uses an Error Correction Code (ECC) architecture, which provides a means of correcting errors in data. The ECC can detect and correct a single bit error, thus ensuring the integrity of the data. The memory also features XOR parity to detect and correct two-bit errors.
The MT41K256M16TW-125:P is designed to perform well at a wide range of temperatures, from -20°C to +85°C. The memory also features a patented thermal-protecting circuitry that is designed to protect against damage from excessive heat. Additionally, all versions of the memory are certified for operation in systems compliant with standards such as MIL-STD-810 and MIL-STD-167 for extreme vibration and shock.
In summary, the MT41K256M16TW-125:P is an extremely versatile type of memory that is ideal for high performance applications. Its wide range of data transfer rates and signaling protocols make it suitable for a variety of different tasks. Its error correction codes, XOR parity, and thermal-protecting circuitry make it reliable and safe to use. All in all, the MT41K256M16TW-125:P is an excellent choice for enterprise applications.
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