MT41K256M16V90BWC1

Series:	--
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR3L
Memory Size:	4Gb (256M x 16)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.283 V ~ 1.45 V
Operating Temperature:	0°C ~ 95°C (TC)

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Application Field

The MT41K256M16V90BWC1 is a memory device designed and manufactured to be used in a variety of applications. It is a DDR3L SDRAM chip and is particularly suited for use in larger, more complex systems. The device is designed to satisfy the needs of applications that require higher levels of performance and high memory density.The high performance of this device provides it with the capability to manage large amounts of data efficiently and efficiently. This device can handle data transfer rates of up to 1600 Mbit/s, which allows it to quickly access data stored in its memory. With 16 Bit wide data paths, the device can easily handle high levels of data processing and data storage. The wide range of capacities available in this chip make it ideal for a variety of applications.The chip is particularly well suited for use with applications that require large amounts of data storage and processing. These include big data applications such as artificial intelligence (AI) and machine learning, where large datasets must be managed and the data must be accessed quickly and efficiently. The chip is also well suited for use in embedded devices and systems. The device is well suited for recording medical images or for transferring data between computers, which are often necessary in medical scenarios.

Working Principle

The working principle of the MT41K256M16V90BWC1 is based on the concept of dynamic random access memory (DRAM). DRAM works by storing data as an electrical charge in capacitors placed on a semiconductor substrate. When the voltage on the capacitors is changed, the data stored in them is changed. This change in the data can be detected and used by the system to access information stored in the memory.The MT41K256M16V90BWC1 is a type of synchronous DRAM that is designed to work in tandem with a clock signal. This type of DRAM uses the clock signal as a reference for its memory operations, allowing for faster access times. The device can store up to 256 Megabits of data, which is divided into four 64-bit banks of data. When data is written to the device, the chip stores it in the nearest available memory bank.The chip is designed to use burst transfer techniques to access data stored in its memory banks. The technique involves sending out a single command to the device, which is then repeated until the desired data is retrieved. This method allows for quick access of the data without having to issue multiple commands. The device is also equipped with error correction circuitry, which help to reduce the number of errors that can occur when accessing data. The MT41K256M16V90BWC1 is designed to be used in applications that require high levels of performance and memory density. With its capable design and attractive prices, the chip is an excellent choice for use in larger systems that require quick access to large amounts of data.

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