MT41K256M8DA-125:K TR

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Memory technology plays an essential role in computing systems, providing a reliable way to store and access large amounts of data. The MT41K256M8DA-125:K TR is an example of this type of memory technology, designed to meet the need for high-performance, low-power memory solutions. This article will look at the application fields and working principle of the MT41K256M8DA-125:K TR.

Application Fields

The MT41K256M8DA-125:K TR is a DDR3 synchronous dynamic random-access memory (SDRAM) designed for use in high-performance memory applications. It is ideal for use in mobile, industrial, and automotive systems, where low power consumption and high performance are essential. Additionally, the device is suitable for a wide range of other applications, including network routers, switches, and base stations.

The MT41K256M8DA-125:K TR offers a wide range of features to meet the needs of any application:

• The device has a maximum operating frequency of 1.25GHz, allowing for fast data transfers.
• Its peak bandwidth is up to 21.3GB/s, making it perfect for high-bandwidth memory applications.
• The device has a low operating voltage of just 1.35V, reducing power consumption and increasing system battery life.
• The device supports a wide range of error-correction codes (ECCs), providing superior reliability and performance in applications requiring error correction.
• The device is available in both commercial and industrial temperature grades, making it suitable for a wide range of applications.

Working Principle

The MT41K256M8DA-125:K TR is a DDR3 SDRAM designed for use in high-performance memory applications. The memory consists of a data-in buffer, a data-out buffer, and an array of rows and columns of memory cells. The device uses a multiplexing technique to access the rows and columns of memory cells, which allows for faster data access times. The device also employs a number of error-correction techniques, such as parity and ECC, to ensure data is reliably stored and retrieved from memory.

When a memory read or write operation is requested, the addressing and data information is first sent to the device\'s data-in buffer. The device then translates the address into row-column information and sends the address information to the array of memory cells. If the memory access is a read operation, data is retrieved from the memory cells and sent to the device\'s data-out buffer. If the memory access is a write operation, data is written to the memory cells.

The MT41K256M8DA-125:K TR is designed for high-performance, low-power memory applications, making it ideal for mobile, industrial, and automotive systems. The device\'s wide range of features, such as its fast operating frequency, high bandwidth, low voltage, and error-correction capabilities, make it well-suited to many types of memory applications.

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