
Allicdata Part #: | MT41K256M8V89CWC1-ND |
Manufacturer Part#: |
MT41K256M8V89CWC1 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 2G PARALLEL DIE |
More Detail: | SDRAM - DDR3L Memory IC 2Gb (256M x 8) Parallel |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3L |
Memory Size: | 2Gb (256M x 8) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.283 V ~ 1.45 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
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The MT41K256M8V89CWC1 is a high-density memory integrated circuit (IC) used for data storage, showing superior performance to its predecessors. By sourcing 1.8 volts of power at up to 533 megahertz (MHz) frequency, it can store up to 256 million 8-bit words in an 8-bit wide stack. This IC was developed to provide robust, high-speed access to large data stores while providing extremely low power, high thermal performance and enhanced fail-safe operation.
The MT41K256M8V89CWC1 provides a dynamic random-access memory (DRAM) structure with a write cycle of 10 nanoseconds (ns) and a read cycle of 8 ns, which ensures ample bandwidth near the physical interface. It has a higher clock frequency than standard memory devices, with a data transmission rate up to 533 MHz, making it one of the fastest memory ICs available. Furthermore, the IC has a self-refreshing interface and a low-power-consumption feature, both of which help to reduce the power requirements for the system.
In terms of stability and robustness, the MT41K256M8V89CWC1 features a temperature sensor, self-refresh and power-fail protection circuits, a thermal protection circuit and a programmable clock system. These features keep the chip stable in a wide range of environmental conditions and allow it to endure stress from outside influences.
The primary application field of the MT41K256M8V89CWC1 is for mobile applications, such as 3G/4G mobile phones and gaming consoles. The IC provides excellent memory bandwidth and low power consumption to enable these devices to process data faster and more efficiently. Additionally, the IC\'s superior temperature and fail-safe operation provide excellent stability and reliability in high-stress environments.
The MT41K256M8V89CWC1 also has many applications in desktop and server computers, where large amounts of data need to be stored and retrieved. The chip\'s high speed and robustness allow for speedy and reliable data throughput for multitasking operations, improving the computer\'s overall performance. Additionally, the IC\'s low power consumption helps to reduce total power consumption of the system, lowering operating costs.
The working principle of the MT41K256M8V89CWC1 is based on a DRAM structure. Data is stored in the chip in a series of cells, each containing 8 bits. A control line, known as the address line, is used to select a particular cell to be read or written to. When the address line is populated with the appropriate address, the ‘word line’ activates the desired cell, enabling it to be read or written to. This process is repeated up to 256 million times to store and retrieve the data stored on the chip.
In conclusion, the MT41K256M8V89CWC1 is a high-density memory IC designed to provide superior performance when compared to similar chips. Its applications include desktop and server computing, gaming consoles and mobile phones. With a 10-ns write cycle, 8-ns read cycle, voltage source of 1.8 volts and a clock frequency up to 533 MHz, the chip offers excellent data throughput as well as low power consumption and stability. Its DRAM structure allows data to be read and written to the chip, ensuring data integrity and reliability.
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