MT41K512M8RH-125 AIT:E

Write Cycle Time - Word, Page:	--
Base Part Number:	MT41K512M8
Supplier Device Package:	78-FBGA (9x10.5)
Package / Case:	78-TFBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 95°C (TC)
Voltage - Supply:	1.283 V ~ 1.45 V
Memory Interface:	Parallel
Access Time:	13.75ns
Series:	--
Clock Frequency:	800MHz
Memory Size:	4Gb (512M x 8)
Technology:	SDRAM - DDR3L
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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Introduction: MT41K512M8RH-125 AIT:E

The MT41K512M8RH-125 AIT:E is a DDR3 2,048 Megabit Single-Lane Mobile LPDDR3 SDRAM module by Micron Technology. It is a highly efficient, easy-to-integrate, low-voltage memory device that is architected to maximize performance while minimizing power consumption. The device is comprised of 4,096 MBytes of DDR3 SDRAM organized as 2,048 Megabits and can be configured as a single-lane, single-rank x32 device.The device features low-power operation with support up to an external data rate of 1866MT/s and does not need refresh when configured for Mobile SDRAM operation. The DRAM also has an integrated pager with a 4-beat mode, allowing the user to read or program a page of four words with each paging command.

Application Field

Micron\'s MT41K512M8RH-125 AIT:E is engineered for mobile device applications, such as tablets and ultra-mobile PCs. It is perfect for applications such as multimedia streaming, 3D gaming, augmented reality, HD video capture and playback, and audio and video editing that require high bandwidth and low-power.The device is also suited for embedded applications, such as industrial and medical imaging devices, that require low-power, higher memory capacities and longer standby times. Its broad operating range and support for low-power, Self Refresh modes enable it to excel in demanding embedded applications.

Working Principle

The Micron MT41K512M8RH-125 AIT:E is a fully synchronous, 8-bit wide DDR3 memory device with a 16-bit wide interface. It has two banks for simultaneous read/write support and supports Interleaved/Burst address mapping. The device features an MPEG-2 Multi-Channel Arbiter, allowing up to 24-channel operations and a wide input/output range of 1.35V to 1.2V and a single-ended data strobe voltage from 1.35V to 1.6V. It also features an independent, two-bit chip select signal for each device and error checking and correction (ECC) support.The MT41K512M8RH-125 AIT:E also includes power-saving features such as Dynamic Power Allocation (DPA), which automatically switches between low-power and high-speed modes, and Refresh By Command (RFC), which enables variable refresh operations. The device also supports multiple refresh intervals, allowing it to be tailored to suit the application. The device provides Very Low Voltage (VLVR) support, allowing the entire device to be powered down with no standby current. This enables the device to transition to its lowest power levels, without having to enable the self-refresh mode and simplifies the system power management. The device also features particle-sensing techniques for improved endurance and reliability.

Conclusion

In conclusion, the MT41K512M8RH-125 AIT:E by Micron Technology is an efficient and effective memory device for multiple applications, including those for tablets, ultra-mobile PCs, embedded systems, and industrial and medical imaging devices. Its low power consumption, wide input/output range, Very Low Voltage (VLVR) support, and multiple refresh intervals all make it an ideal choice for these applications. With its features and versatility, it will surely be a top choice for memory device manufacturers and integrators.

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