
Allicdata Part #: | MT41K512M8RH-125IT:E-ND |
Manufacturer Part#: |
MT41K512M8RH-125 IT:E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 78FBGA |
More Detail: | SDRAM - DDR3L Memory IC 4Gb (512M x 8) Parallel 80... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | MT41K512M8 |
Supplier Device Package: | 78-FBGA (9x10.5) |
Package / Case: | 78-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 95°C (TC) |
Voltage - Supply: | 1.283 V ~ 1.45 V |
Memory Interface: | Parallel |
Access Time: | 13.75ns |
Series: | -- |
Clock Frequency: | 800MHz |
Memory Size: | 4Gb (512M x 8) |
Technology: | SDRAM - DDR3L |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technologies are constantly evolving and taking the world into the future. The MT41K512M8RH-125 IT:E is one of the latest advancements in memory technology. It is one of the most powerful and advanced memory devices on the market and is utilized for cutting-edge applications. This article will cover the application field and working principle of MT41K512M8RH-125 IT:E.
Application Fields
The MT41K512M8RH-125 IT:E is a versatile memory device that is suitable for a variety of different application fields. It is primarily used in mission-critical applications where reliability and speed of operation are paramount. It is often used in data-intensive environments such as data warehouses and cloud computing, as well as in advanced analytics and artificial intelligence (AI) applications. The device is also suitable for embedded systems and robotic applications, as well as high-performance computing (HPC) applications.
The MT41K512M8RH-125 IT:E is also commonly used in High-Definition (HD) video editing and high-speed, multi-threaded gaming applications. It is often used in the medical field for applications such as medical imaging and heavy data processing. Furthermore, the device is often used in the aerospace industry, automotive engineering, and telecommunications. It is also suitable for a variety of other application fields, such as energy management, machine learning, and edge computing.
Working Principle
The MT41K512M8RH-125 IT:E is a Dynamic Random Access Memory (DRAM) device that utilizes a memory cell design based on modern transistor-free, content-addressable memory technologies. This memory cell design results in a very high level of performance compared to other DRAM devices. The device is composed of multiple banks of capacitors, each of which can store a set of values. These values can be retrieved by supplying the appropriate power to the appropriate banks. This allows for very fast access to information as the capacitors respond quickly to changes in energy.
The MT41K512M8RH-125 IT:E additionally has a high-bandwidth interface that speeds up data transfer speeds. It is also designed for low-power operation, meaning that it consumes a minimum amount of power even when running at peak performance. Furthermore, the device utilizes Error Correcting Code (ECC) technology, which helps to ensure the accuracy and integrity of data stored within it. All of these features combine to create a very powerful and reliable memory device.
Conclusion
The MT41K512M8RH-125 IT:E is a powerful, versatile, and reliable memory device. Its modern design allows for operation at very high speeds and low power consumption. Additionally, its advanced Error Correcting Code technology ensures the accuracy and integrity of data stored in it. It is suitable for a variety of different application fields and is often used in mission-critical applications, high-definition video editing, and gaming applications. Through its innovative design, the MT41K512M8RH-125 IT:E is sure to continue to revolutionize the memory technology industry.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MT41K128M8JP-15E:G | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41J64M16JT-15E XIT:G | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
MT41K64M16TW-107 AIT:J TR | Micron Techn... | 4.19 $ | 6000 | IC DRAM 1G PARALLEL 96FBG... |
MT41J128M8HX-15E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41J128M16HA-125G:D | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 96FBG... |
MT41J64M16JT-125:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
MT41J256M16RE-15E IT:D | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K512M8DA-107 AAT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41J128M8JP-15E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41K512M8DA-107 AIT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41K64M16TW-125:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 800MH... |
MT41J256M4HX-15E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41J128M16JT-125:K | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 96FBG... |
MT41J256M8DA-125:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41K512M4DA-125:K | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J64M16JT-15E IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
MT41K1G8THE-15E:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT41K256M4DA-107:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41K512M8DA-107 AIT:P | Micron Techn... | 11.68 $ | 235 | IC DRAM 4G PARALLEL 78FBG... |
MT41K512M16TNA-125 IT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41K256M16HA-107G:E | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K512M16HA-125 IT:A | Micron Techn... | 82.08 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41K256M16LY-093:N | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1067M... |
MT41J256M16HA-107:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41J256M8JE-187E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 82FBG... |
MT41K256M16TW-107 M AIT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K512M16HA-107:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41J512M4HX-187E:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J64M16JT-15E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
MT41K1G4THV-15E:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41J128M8JP-15E AIT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41J256M8DA-093:K | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J512M8RH-093:E | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41K256M8DA-125:M | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J256M16HA-125:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K2G4TRF-107:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT41K512M16HA-125 AIT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41K1G8TRF-125:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT41K256M4JP-15E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41K1G4DA-107:P | Micron Techn... | -- | 996 | IC DRAM 4G PARALLEL 78FBG... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

LPDDR3 6G DIE 192MX32Memory IC

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
