
Allicdata Part #: | MT41K512M8V00HWC1-N002-ND |
Manufacturer Part#: |
MT41K512M8V00HWC1-N002 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL |
More Detail: | SDRAM - DDR3L Memory IC 4Gb (512M x 8) Parallel |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3L |
Memory Size: | 4Gb (512M x 8) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.283 V ~ 1.45 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
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Introduction to MT41K512M8V00HWC1-N002
The high speed MT41K512M8V00HWC1-N002 is a type of DRAM memory chip released by Micron Technology and is designed for high density applications in servers and other discreet computing systems. It consists of two components, the DRAM chip, and the memory controller. The DRAM chip is responsible for providing the memory capacity and speed, while the memory controller is responsible for memory management, timing management, error correction and supporting features such as auto refresh and power efficient operation.
Application Field of MT41K512M8V00HWC1-N002
The MT41K512M8V00HWC1-N002 DRAM chip is a powerful and advanced solution from Micron Technology. Due to its advanced andhigh speed performance, this DRAM chip is ideal for dense applications such as video surveillance, medical imaging, supercomputing, storage and other intensive and high-performance computing(HPC). It is also able to scale and be used for smaller applications such as mobile phones, tablets, and embedded systems.
In addition, the MT41K512M8V00HWC1-N002 DRAM chip offers several features that make it very appealing to professional and industrial usages. For example, the chip is made with advanced error correction technologies, support for multi-node architectures, low power consumption and a high-speed memory interface.
Working Principle of MT41K512M8V00HWC1-N002
The architecture of the MT41K512M8V00HWC1-N002 memory chip consists of four main components: the DRAM cell, the memory controller, the error correction engine, and the timing management unit. Each component plays a crucial role in the working of this chip.
The DRAM cell is responsible for storing the data on the chip, it does this by mapping the location address of the data on the chip. The memory controller is responsible for managing the read and write operations of the data, it does this by translating the logical addresses of the data into physical address on the chip. The error correction engine is responsible for detecting and correcting any errors in the data when reading or writing data to the chip. Finally, the timing management unit is responsible for ensuring that the read and write operations of the data is done in an orderly manner at the right times. All these components together create a highly efficient memory chip that can be used to store and access data in an efficient manner.
In addition, the MT41K512M8V00HWC1-N002 memory chip also supports advanced features such as error protection, data integrity, dynamic memory optimizations, and power efficient operation. These features make it a better choice for high-performance applications, where speed and accuracy is essential.
Conclusion
The MT41K512M8V00HWC1-N002 is an advanced memory chip designed for high performance and dense applications. Its features and functions make it an ideal choice for anything from video surveillance to supercomputing, and embedded systems. Its architecture consisting of four main components, the DRAM cell, the memory controller, the error correction engine, and the timing management unit, ensures its stability and performance while making it an easy-to-use memory solution.
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