Allicdata Part #: | 557-1291-2-ND |
Manufacturer Part#: |
MT47H128M4B6-3:D TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 512M PARALLEL 60FBGA |
More Detail: | SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 3... |
DataSheet: | MT47H128M4B6-3:D TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT47H128M4 |
Supplier Device Package: | 60-FBGA |
Package / Case: | 60-FBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 85°C (TC) |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Memory Interface: | Parallel |
Access Time: | 450ps |
Series: | -- |
Clock Frequency: | 333MHz |
Memory Size: | 512Mb (128M x 4) |
Technology: | SDRAM - DDR2 |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is essential for any infrastructure and is essential for computing, storage, and network applications. MT47H128M4B6-3:D TR is a type of memory manufactured by Micron, it has special features which set it apart from other types of memory. This article will outline the application field and working principle of MT47H128M4B6-3:D TR and explore its potential applications.
MT47H128M4B6-3:D TR is a type of DDR4 memory which has a baseline speed of 1333MHz. It is a high-reliability memory module, special for mission-critical enterprise applications. It features seamless error-correcting technology, and is designed to operate at lower operating voltages, reducing the power consumption of these memory modules. The high-quality components of these memory modules result in increased reliability and stability.
The application field of MT47H128M4B6-3:D TR is mainly in the enterprise space due to its superior characteristics. It is used in memory-intensive applications such as databases and data storage for mission-critical applications. It is also used in server systems, particularly for applications which require low power consumption and high reliability. It is also used in embedded systems and supercomputers, due to its advanced features.
The working principle of MT47H128M4B6-3:D TR is based on the DDR or Double Data Rate design. This design works by transferring data twice per clock cycle, resulting in an increased bandwidth. Data is transferred four times faster than regular DDR3 or DDR2 memory modules, resulting in an increased amount of data that can be accessed in a single clock cycle. This type of memory is also error-correcting, meaning that if any errors are detected in the data, it can be corrected automatically before it is passed on.
It is important to note that MT47H128M4B6-3:D TR is not the only type of memory available. There are other types of memory modules which are better suited for different applications. For example, DDR3 is better for gaming, while an Instant RAM Disk, or IRD, is better for applications which require fast access to data. Additionally, there are other types of memory modules available, such as RAMBUS and QDR, which are better suited for other applications.
In conclusion, MT47H128M4B6-3:D TR is a type of high-reliability memory module which is especially suitable for mission-critical applications. The working principle of this memory module is based on the DDR or Double Data Rate design, which allows for higher bandwidth and faster data transfer. This type of memory is particularly suitable for enterprise applications, and is also suitable for embedded systems, supercomputers and other memory-intensive applications.
The specific data is subject to PDF, and the above content is for reference
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MT47H32M16BN-5E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H64M8B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M4B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H256M4HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M16HR-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
MT47H512M4THN-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
MT47H512M4THN-37E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
MT47H128M8HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H256M4HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M8B6-25E L:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8HQ-3:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H16M16BG-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H16M16BG-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H32M16BT-37E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
MT47H32M16BT-3:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
MT47H32M8BP-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT47H32M8BP-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT47H128M8BT-3 L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M8BT-37E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M8BT-5E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H16M16BG-37V:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H32M16CC-37E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E L:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E L:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-3E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-3E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-5E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-5E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
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