MT47H64M16HR-3 IT:G TR

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Memory plays a vital role in our daily lives. As the demand for memory increases, memory manufacturers are striving to develop memory technologies to meet the ever-increasing demand. One of the latest developments in memory technology is the MT47H64M16HR-3 IT:G TR. This article will discuss the application fields and working principles of the MT47H64M16HR-3 IT:G TR.

The MT47H64M16HR-3 IT:G TR is a synchronous Dynamic Random Access Memory (DRAM) which is commonly used in device applications such as digital cameras, PDAs, video gaming consoles, and smartphones. It is available in the following package: 128-ball Line Grid Array package (LGA). The MT47H64M16HR-3 IT:G TR has a capacity of 4GB and supports data transfer rates of up to 800Mb/s.

The MT47H64M16HR-3 IT:G TR is ideal for use in applications where data throughput is a key requirement, such as real-time video streaming and high-resolution image processing. This memory device also has improved power efficiency compared to traditional DRAM memory devices—this means less energy is used to store information. It also has a low operating voltage of 1.35V and consumes less power during operation. The MT47H64M16HR-3 IT:G TR also supports flexible refresh intervals that can be adjusted to improve system performance.

The working principle of the MT47H64M16HR-3 IT:G TR can be broken down into three main components: the DRAM array, the timing and control circuitry, and the address/data paths. The DRAM array stores the data and contains millions of memory cells. Each cell is capable of storing one bit of information. The timing and control circuitry is responsible for controlling the transfer of data between the memory cells and the controller. The address/data paths allow the controller to indicate which memory cells need to be accessed in order to read or write data.

Lastly, the MT47H64M16HR-3 IT:G TR supports the latest signal levels, such as SSTL_15 and SSTL_18. This ensures higher signal quality and higher data transfer rates. The device is also designed to use a single clock signal, which simplifies the system\'s design and reduces costs.

In conclusion, the MT47H64M16HR-3 IT:G TR is a memory device designed for applications where data throughput is a requirement. It is available in a 128-ball LGA package and is capable of 4GB of storage. The device supports data transfer rates of up to 800Mb/s and features improved power efficiency. The working principle of the memory device consists of the DRAM array, the timing and control circuitry, and the address/data paths. The device is also designed to support the latest signal levels and use a single clock signal.

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