
Allicdata Part #: | MT47H64M16NF-187E:M-ND |
Manufacturer Part#: |
MT47H64M16NF-187E:M |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 1G PARALLEL 84FBGA |
More Detail: | SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 533... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT47H64M16 |
Supplier Device Package: | 84-FBGA (8x12.5) |
Package / Case: | 84-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 85°C (TC) |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Memory Interface: | Parallel |
Access Time: | 350ps |
Series: | -- |
Clock Frequency: | 533MHz |
Memory Size: | 1Gb (64M x 16) |
Technology: | SDRAM - DDR2 |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Active |
Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MT47H64M16NF-187E:M Memory: Application Field and Working Principle
MT47H64M16NF-187E:M is a type of memory designed specifically for high-performance applications. It is widely used in data centers, networking environments, and embedded systems. Manufactured by Micron Technology, this type of memory features high speed, low power consumption, and reliability. The following article will provide an overview of the application field and working principle of MT47H64M16NF-187E:M memory.
Application Field of MT47H64M16NF-187E:M Memory
MT47H64M16NF-187E:M memory is widely used in a variety of applications. It is used for mobile applications such as tablets and phones, network applications, and data centers. It is also used in industrial automation and control systems, multimedia applications, medical systems, and gaming consoles. In addition, its low power consumption and high reliability make it an ideal choice for high-performance applications.
The main application fields of MT47H64M16NF-187E:M memory are:
• Mobile applications, such as tablets and phones
• Network applications
• Data centers
• Industrial automation and control systems
• Multimedia applications
• Medical systems
• Gaming consoles
Due to its many advantageous features, MT47H64M16NF-187E:M memory is increasingly used in a wide range of applications. It is particularly suitable for high-performance applications that require high speed, low power consumption, and reliability.
Working Principle of MT47H64M16NF-187E:M Memory
The MT47H64M16NF-187E:M memory is a type of Dynamic Random Access memory (DRAM), which stores data using cells containing capacitors and transistors. The capacitors store the data in the form of electrical charge, and the transistors act as switches to control the flow of electrical current. To read or write data, the computer sends an address to the memory controller, which selects the corresponding cell and reads or writes the data.
The memory controller can also manipulate the data in various ways. For example, the controller can write data in a specific order, write or read multiple cells at once, and move data from one memory bank to another. As a result, the user can access and manipulate data quickly and efficiently.
MT47H64M16NF-187E:M memory is designed to operate at high speed and low power consumption. It has a wide range of operating temperatures and can run on both 1.35 V and 1.5 V power systems. The memory also features an on-die termination (ODT) system, which provides improved signal integrity for high-performance applications.
In addition, this type of memory also supports error-correcting code (ECC) and error-detecting code (EDC). These features help increase system reliability by detecting and correcting errors in data storage. As a result, MT47H64M16NF-187E:M memory can withstand the rigors of extreme conditions and is suitable for mission-critical applications.
Conclusion
MT47H64M16NF-187E:M memory is an important component of today’s high-performance applications. It has a wide range of application fields, including mobile devices, networking, data centers, and industrial automation. This type of memory also features high speed, low power consumption, and high reliability. Moreover, its on-die termination system, error- correcting code, and error-detecting code help ensure accurate and efficient data storage. With all these features, MT47H64M16NF-187E:M memory is an excellent choice for mission-critical applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MT47H512M4THN-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
MT47R512M4EB-25E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60FBG... |
MT47H32M16CC-5E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16HW-25E AAT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16U67A3WC1 | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL WAF... |
MT47H128M16PK-25E IT:CTR | Alliance Mem... | 4.66 $ | 2000 | IC DRAM 2G PARALLEL 84FBG... |
MT47H128M4CF-25E:G | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8CF-25E IT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M16HR-3 AAT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
MT47H32M16CC-37E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H64M8CF-25E IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8CF-25E AIT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H128M8SH-25E IT:M | Micron Techn... | -- | 14557 | IC DRAM 1G PARALLEL 60FBG... |
MT47H32M16BT-37E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
MT47H128M8B7-37E L:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M16RT-3:C | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 84FBG... |
MT47R256M4CF-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H128M8CF-3 AAT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H256M8THN-25E:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
MT47H32M16HR-25E:G | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H512M4THN-25E:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 400MH... |
MT47H64M8CB-5E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H256M4HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M8B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H16M16BG-3 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H64M8B6-5E IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H512M8WTR-25E:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 63FBG... |
MT47H64M8CF-187E:G | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8JN-3 IT:H | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H32M16HR-25E IT:G TR | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H256M4B7-37E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M8CF-3 IT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M16HR-25E IT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
MT47H128M8CF-187E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H32M16CC-5E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H64M16HR-25E L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
MT47H64M16HR-3:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
MT47H128M4CF-25E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H64M4BP-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT47H32M16CC-3E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

LPDDR3 6G DIE 192MX32Memory IC

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
