| Allicdata Part #: | MT47H64M8CF-25EL:GTR-ND |
| Manufacturer Part#: |
MT47H64M8CF-25E L:G TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 512M PARALLEL 60FBGA |
| More Detail: | SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 40... |
| DataSheet: | MT47H64M8CF-25E L:G TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT47H64M8 |
| Supplier Device Package: | 60-FBGA (8x10) |
| Package / Case: | 60-TFBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 85°C (TC) |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Memory Interface: | Parallel |
| Access Time: | 400ps |
| Series: | -- |
| Clock Frequency: | 400MHz |
| Memory Size: | 512Mb (64M x 8) |
| Technology: | SDRAM - DDR2 |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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MT47H64M8CF-25E L:G TR, a kind of memory-type integrated circuit, is widely used in various electronic products. It has a variety of applications, from high-end server systems to intelligent mobile terminal systems. What is its working principle? And what are its application fields? This article will explain in detail.
Overview
MT47H64M8CF-25E L:G TR is a memory-type integrated circuit developed by the company Micron Technology. It has a high density and operates at low voltage, allowing memory functions to be available in a single chip. The product is part of a larger family of DRAMs optimized for a variety of applications, including automotive and industrial, server and storage, mobile, and retrieval products. It has a storage capacity of 64Mbit and a random access memory of 4Mbytes. It is a dual-bank, synchronous, Self-Refreshing DRAM (SRDRAM). It consists of a core, input buffers, and two SRAMs. It works on a standard 3.3V power supply. The data rate can reach up to 100MHz, so the operating speed is very fast.
Working Principle
MT47H64M8CF-25E L:G TR adopts synchronous self-refreshing DRAM design. In this design, the SRAM is divided into two banks, Bank A and Bank B. Data stored in the memory is split into two banks and each bank can operate independently. Each memory bank can be read and written separately at the same time. When data is accessed in Bank A, the refresh of Bank B can be started simultaneously. This makes reading and writing faster and more efficient. The refresh and read operations are performed separately and the control signals are transmitted between the two banks.
In addition, the memory also has built-in error correction code (ECC) for simple errors that may occur during transmission. This built-in ECC can detect up to one-bit error in each memory location, making the memory very reliable. In addition, the memory has an auto-refresh function, which can automatically detect when a refresh operation is necessary and execute the refresh operation to prevent data from being lost. Furthermore, the memory can be programmed with various functions, allowing it to be used for various applications.
Application Fields
The MT47H64M8CF-25E L:G TR memory is widely used in various applications due to its excellent characteristics. It is mainly used in computer systems, video game consoles, automotive systems, portable electronic systems, and many other embedded devices. It is especially suitable for high-end mobile phones and tablet PC systems, providing a reliable storage medium for these mobile devices.
In addition, the memory can also be used in server and storage systems, providing a high-capacity storage medium with fast access times and low power consumption. The memory can also be used in Internet of Things (IoT) applications, providing a reliable data storage medium for IoT systems.
Finally, the memory can also be used in robotics and artificial intelligence (AI) applications. The high-speed operation and large capacity of the memory make it suitable for use in various AI applications, providing a reliable storage medium for AI systems.
Conclusion
To sum up, MT47H64M8CF-25E L:G TR is a memory-type integrated circuit developed by Micron Technology. It has a very fast data rate, a large storage capacity, built-in error correction codes, and an auto-refresh function, making it very reliable. It is widely used in computer systems, video game consoles, automotive systems, portable electronic systems, and many other embedded devices. It is especially suitable for high-end mobile phones and tablet PC systems because of its low power consumption and high data rates.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT47H128M4B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HW-3 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16NF-187E:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H32M16BN-25E IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M4SH-25E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H32M16CC-5E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H16M16BG-5E:B | Micron Techn... | -- | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H128M8CF-3 AIT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8BT-3 L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8CF-25E L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H32M16CC-5E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M4CB-3:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H128M8B7-37E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8CF-25E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H16M16BG-3E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H64M16HR-3 IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8CF-3 AAT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H256M8THN-25E:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H128M8JN-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8SH-187E:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16CC-37E L:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8B7-5E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H128M8BT-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M16HR-3 L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H512M4THN-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47R64M16HR-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16HR-25E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16HW-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8CF-25:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H256M8THN-3:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H64M16NF-25E AIT:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16HR-3:F | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H32M16HR-187E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8HQ-3 L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16CC-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H16M16BG-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H64M8CB-37E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HR-3 AIT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M8SH-25E AAT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 400... |
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MT47H64M8CF-25E L:G TR Datasheet/PDF