MT47H64M16HR-3 L:G TR

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MT47H64M16HR-3 L:G TR Memory

MT47H64M16HR-3 L:G TR is a type of memory device, suitable for a broad range of applications. It is a low-power, high-performance double data rate three (DDR3) static random access memory (SRAM). It is designed to offer the best performance in terms of power efficiency and speed.

This memory device is beneficial for various applications, including PCs, networks, embedded systems, scientific computing, and imaging systems. The memory device can be used to store data, such as numbers and images, and execute programs. The device features fast random access time and low power consumption, thus making it especially suitable for computer-based applications.

The MT47H64M16HR-3 L:G TR memory device consists of an 8-bit parallel interface and a 16MB capacity. It can operate at both 5V and 3.3V. The device supports data rates of up to 1600MB/s and can deliver up to 2.4W of power. It also incorporates automatic power saving features that can save power during idle periods.

In terms of its working principle, the MT47H64M16HR-3 L:G TR memory device works by utilizing a three-level hierarchy. The first level is the main memory, which is used to store data and instructions. The second level is the cache, which stores frequently-accessed data in a very high-speed memory. Finally, the third level is the processor, which is used to execute instructions stored in the main memory.

The main memory of the MT47H64M16HR-3 L:G TR memory device is made up of memory cells, arranged in an 8-bit architecture. It operates at 3.2GHz clock speed and has an access time of 0.7 ns. This provides quick access to data stored in the memory cells. The cache stores data that is accessed more regularly, providing faster access times to these data.

The memory cells of the MT47H64M16HR-3 L:G TR memory device use differential logic to store data. Differential logic data is stored in two states - a high (1) and a low (0). The data is encoded in this manner to reduce the number of memory operations required for reading and writing. This reduces the power consumption of the device.

In addition, the memory device uses error detection and correction (EDC) features to protect data that is stored in the memory. The EDC algorithms detect any errors in the data and correct them accordingly. This ensures that data stored in the device is always accurate.

The MT47H64M16HR-3 L:G TR memory device is used in a variety of applications, from scientific computing to multimedia applications. The device offers a high level of performance, low power consumption, and fast access to data. With these features, it is a reliable and cost-effective memory device for a broad range of applications.

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