MT47H64M16NF-25E AIT:M Allicdata Electronics
Allicdata Part #:

MT47H64M16NF-25EAIT:M-ND

Manufacturer Part#:

MT47H64M16NF-25E AIT:M

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 1G PARALLEL 84FBGA
More Detail: SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400...
DataSheet: MT47H64M16NF-25E AIT:M datasheetMT47H64M16NF-25E AIT:M Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT47H64M16
Supplier Device Package: 84-FBGA (8x12.5)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 400ps
Series: --
Clock Frequency: 400MHz
Memory Size: 1Gb (64M x 16)
Technology: SDRAM - DDR2
Memory Format: DRAM
Memory Type: Volatile
Part Status: Active
Packaging: Bulk 
Description

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Introduction to Memory

Memory is an essential part of computer technology and serves as a form of data storage. Many different types and sizes of memory are used in today’s computers, from dynamic RAM (DRAM) to static RAM (SRAM) to flash memory (NOR and NAND). In this article, we will discuss the application field and working principle of MT47H64M16NF-25E AIT:M, one type of DRAM memory.

Application Field of MT47H64M16NF-25E AIT:M

MT47H64M16NF-25E AIT:M is a double data rate (DDR3) DRAM, which is commonly used in graphic cards, notebook computers and server memory. The advanatage of this type of memory is its low voltage. It only requires 1.35 volts, which makes it suitable for mobile and low power applications. It also offers superior performance and faster speed, which makes it suitable for high performance applications.

Working Principle

MT47H64M16NF-25E AIT:M works on synchronous double data rate (DDR) protocol. It requires two clock edges (rise and fall) to read/write a single bit. The memory consists of memory cells arranged in a grid with address lines connecting each column and row. To read a bit, the address of the desired memory cell is loaded onto address lines and a clock signal is given. Depending on the clock signal, the data is read from the memory cell. To write a bit, the data has to be loaded onto data lines before the clock signal is given, thereby allowing the data to be stored in the memory cell.

Conclusion

In conclusion, MT47H64M16NF-25E AIT:M is a type of DRAM memory that is widely used in graphic cards, notebook computers and server memory. It has low voltage requirement and superior performance and faster speed, making it suitable for low power and high performance applications. The memory works on synchronous double data rate (DDR) protocol and requires two clock edges (rise and fall) to read/write a single bit. This article provides a brief overview of the application field and working principle of MT47H64M16NF-25E AIT:M.

The specific data is subject to PDF, and the above content is for reference

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