MT47H128M4CB-3:B

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT47H128M4
Supplier Device Package:	60-FBGA
Package / Case:	60-FBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 85°C (TC)
Voltage - Supply:	1.7 V ~ 1.9 V
Memory Interface:	Parallel
Access Time:	450ps
Series:	--
Clock Frequency:	333MHz
Memory Size:	512Mb (128M x 4)
Technology:	SDRAM - DDR2
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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MemoryThe MT47H128M4CB-3:B (TF-LPDDR3) is widely used in today’s complex mobile devices like tablets and smartphones. This memory device can improve the performance, cost and power consumption for the advanced devices. It is ideal for those mobile applications that require fast data transfers and intensive data processing. The memory device is designed to provide an optimal balance between power and storage capacity, as well as robust reliability.The TF-LPDDR3 is designed to operate at an ultra-low operating voltage level of between 1.2V and 1.8V. It also has a reduced operating temperature range of between 0°C and +125°C and a fast read/write access time of between 8ns and 24ns. One of the main features of the TF-LPDDR3 is its wide data transfer rate, which can reach up to 3,600MT/s. Its memory density can reach up to 1GB and its chip-to-chip interface supports up to 32 bits of data transfer.The working principle of the TF-LPDDR3 is based on the Dynamic Random Access Memory (DRAM) technology. DRAM is a type of memory that stores data in a series of capacitors. Each time a memory cell is accessed, the capacitor is charged and discharged. This process is repeated for each memory cell and result in a series of charges and discharges to create the memory effect.In DRAM memory technology, the capacitors are arranged in a matrix of columns and rows. Each column is designated as ‘word line’ and each row is referred to as ‘bit line’. To access a particular memory cell, a logic signal is applied to a particular word line and a particular bit line is driven to the appropriate voltage. This allows the desired memory cell to be accessed and its state is read or changed.The main application field for the TF-LPDDR3 device is mobile computing and communications, such as smartphones and tablet PCs. This memory device can also be used in automotive and industrial applications where specific performance is required and power efficiency is of concern. Other applications, such as medical and aerospace, may also benefit from TF-LPDDR3 due to its high speed, low power, and compact form factor.To sum up, the TF-LPDDR3 is a reliable, cost effective, and power-efficient memory device designed for a variety of applications. Its working principle is based on DRAM technology and it can operate within an operating voltage range of between 1.2V and 1.8V. With its wide data transfer rate of up to 3,600MT/s and a wide range of chip-to-chip interface, the TF-LPDDR3 can significantly improve the performance of mobile devices.

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