MT47H128M8CF-25:H Allicdata Electronics
Allicdata Part #:

MT47H128M8CF-25:H-ND

Manufacturer Part#:

MT47H128M8CF-25:H

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 1G PARALLEL 60FBGA
More Detail: SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400...
DataSheet: MT47H128M8CF-25:H datasheetMT47H128M8CF-25:H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT47H128M8
Supplier Device Package: 60-FBGA (8x10)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 400ps
Series: --
Clock Frequency: 400MHz
Memory Size: 1Gb (128M x 8)
Technology: SDRAM - DDR2
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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Memory – MT47H128M8CF-25:H Application Field and Working PrincipleMemory is an integral part of the majority of modern digital systems. Without memory, any system would lose potential applications due to the extensive amount of data being used. For this reason, memory has become an essential component of modern computing. The MT47H128M8CF-25:H, also known as “Hynix DDR3 1066 6G M8C-25”, is one of the latest memory components developed and released by Hynix. It is part of their DDR3 SDRAM family of products and is specifically designed to work with the latest generation of computer systems. Comparing with previous generations of DRAM, DDR3 SDRAM offers lower power consumption, greater bandwidth, and support for higher clock speeds. Compared to previous generations, DDR3 can also support multiple memory modules in a single channel, meaning that it is capable of providing significantly greater storage capacity for its size. The MT47H128M8CF-25:H is an 8 Gigabits (GB) double-data-rate 3 synchronous dynamic random-access memory (SDRAM) device consisting of eight (8) 4Gbit memory components. It has a transfer rate of 8 Gigabits per second and a maximum clock frequency of 1066 Mhz. The device has a maximum power dissipation of 4.4 Watts, and a maximum operating voltage of 1.6 V. The device features a Unbuffered 68-pin JEDEC 260-pin Dual In-line Memory Module (DIMM) package, and is compatible with DDR3 SDRAM CL9, CL10 and CL11 speeds. The device’s architecture provides for support for advanced memory functions including: bank interleaving, on-die termination, low voltage operation support, deep power-down mode, programmable burst length and latency, and data training. It also supports 16-bit data bus width, 2-bit prefetch, and at-speed timing read/write operations. The functionality of MT47H128M8CF-25:H can be summed up as high speed and low power consumption. Its primary application fields are in high speed computing, high capacity storage and networking fields. It is ideal for desktop PCs, notebook PCs and gaming systems as well as servers. In particular, servers can benefit from the MT47H128M8CF-25:H’s exceptional performance and capacity, providing efficient and reliable operations with less power consumption and higher memory speed than other memory components.In conclusion, the Memory MT47H128M8CF-25:H is an advanced memory component that is capable of providing fast, low power and high storage capacity for a wide range of applications. Due to its substantial speed, wide compatibility and low power requirements, the MT47H128M8CF-25:H is ideal for a range of computing, storage and networking solutions.

The specific data is subject to PDF, and the above content is for reference

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