Allicdata Part #: | MT47H128M8CF-25E:M-ND |
Manufacturer Part#: |
MT47H128M8CF-25E:M |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 1G PARALLEL 400MHZ |
More Detail: | SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400... |
DataSheet: | MT47H128M8CF-25E:M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 1Gb (128M x 8) |
Clock Frequency: | 400MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 400ps |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 85°C (TC) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory plays an important role in the modem world, and MT47H128M8CF-25E:M is one of the latest memory components currently being used. It is a random access memory (RAM) component, and it has been designed with the latest technology to maintain a low power consumption and an excellent performance.
The MT47H128M8CF-25E:M is a double data rate (DDR) memory module that uses a DDR3 synchronous DRAM interface. It is suitable for CPUs and systems, such as Intel\'s Core i7 and other high-end systems, and it can be used as a main memory or a cache memory.
The MT47H128M8CF-25E:M offers high-speed transfers at a low power consumption. It has a high data rate of up to 2133MT/s, which can be achieved with a lower voltage supply than conventional memory modules. It also provides superior reliability, and high-end ECC protection. This makes it an ideal solution for mission-critical applications, such as enterprise servers and industrial applications.
The MT47H128M8CF-25E:M comes in a standard DDR3 package with a 270-pin SO-DIMM form factor, and a maximum size of 4GB per module. There are also other versions available, such as the 8GB or 16GB models. It is also compatible with Intel\'s new Ivy Bridge and Haswell platforms.
The MT47H128M8CF-25E:M is noted for its excellent performance, as it offers a fast access time of 7.8ns and an impressive signal-to-noise ratio of greater than 95 dB. This means it is less susceptible to signal interference and can handle high-frequency signals better than conventional memory modules.
In terms of its application fields, the MT47H128M8CF-25E:M is perfect for enterprise servers, cloud computing, video conferencing, and other applications that require fast data rates, reliability, and low power consumption. Its superior features make it a great choice for any system that requires a reliable, high-performance memory solution.
The working principle of the MT47H128M8CF-25E:M is based on a DDR3 synchronous DRAM interface. The DRAM interface enables the module to provide fast access and transfers of data. The DDR3 interface also allows for a low power consumption, since it can operate at a lower voltage than traditional memory modules. As well, the DDR3 interface provides superior reliability and ECC protection.
The MT47H128M8CF-25E:M can also be used for industrial applications, as it has been tested for use in demanding environments such as motor control and industrial automation. It is also compatible with Intel\'s new Ivy Bridge and Haswell platforms, which makes it an ideal solution for consumer and desktop systems.
In summary, the MT47H128M8CF-25E:M is a perfect choice for any system that requires a reliable, high-performance memory solution. It is a DDR3 synchronous DRAM interface that offers a high data transfer rate, low power consumption, and excellent ECC protection. It is suitable for enterprise servers, cloud computing, video conferencing, and other applications that require fast data rates, reliability, and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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MT47H256M8EB-25E:C | Micron Techn... | -- | 1773 | IC DRAM 2G PARALLEL 60FBG... |
MT47H32M16BN-5E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H64M8B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M4B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H256M4HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M16HR-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
MT47H512M4THN-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
MT47H512M4THN-37E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
MT47H128M8HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H256M4HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M8B6-25E L:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8HQ-3:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H16M16BG-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H16M16BG-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H32M16BT-37E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
MT47H32M16BT-3:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
MT47H32M8BP-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT47H32M8BP-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT47H128M8BT-3 L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M8BT-37E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M8BT-5E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H16M16BG-37V:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H32M16CC-37E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E L:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E L:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
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