MT47H128M8HQ-3 IT:G

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Memory devices are essential components of computing systems, providing an essential bridge between the processor and data storage or peripherals. The MT47H128M8HQ-3 IT:G is a double data rate synchronous dynamic random-access memory (DDR SDRAM) device with an 8-bit data width. Trying to understand the application fields and working principle of this memory IC can be beneficial for anybody who works with semiconductor products.

Features of the MT47H128M8HQ-3 IT:G

The MT47H128M8HQ-3 IT:G is a DDR SDRAM device with a data bus width of 8-bits. It is designed to operate between 1.80V and 1.95V and has a max clock speed of 200Mhz. The memory density of this chip is 256MB and has 16 banks. It also has 8 internal IRQ lines and includes Internal thermal throttle, write levelling and improved reliability features. It is available in a 68-ball FBGA package.

Application fields of the MT47H128M8HQ-3 IT:G

The MT47H128M8HQ-3 IT:G is suitable for applications where high speed, low power and wide data width are required. It can be used in network workstations, server platforms, and embedded applications. Additionally, it can be used in digital audio/video applications as well as digital TV systems.

Working Principle of the MT47H128M8HQ-3 IT:G

The MT47H128M8HQ-3 IT:G utilizes a double data rate circuit for writing and reading data. A fast internal clock is used to control all the operations and separate clock control signals are used for transmission. The data is transmitted serially for writing and4 read, using four bit slices for each data word. Both edges of the clock are used for data transmission, which allows doubling the speed of the clock.

For writing data, other than the address and row and column address strobe (RAS/CAS) signals, command signals are also necessary. The command signals are programmed in a 1T/2T mode, where 1T is the short latency and 2T the long latency modes. Depending on the command, either 8-bit words or 16-bit words are written in the memory. For writing 8-bit words, only one cycle is necessary and for 16-bit words two cycles are needed.

The internal architecture of the memory contains an array of memory locations called the Array Memory Module (AMM). Each memory location is accessed by a separate set of input and output ports. For each memory location, the input ports include the address bus, the data bus, and various control signals. The output ports include data and various other control signals.

For reading data, the MT47H128M8HQ-3 IT:G utilises 4n prefetches and output drivers to achieve a higher speed of data transfer. The 4n prefetches read the data from the memory in blocks and the output drivers transfer the data to the processor or other peripherals. By using this method, the data transfer rate is twice as fast as the rate used for writing, as both edges of the clock are used for reading.

Finally, the MT47H128M8HQ-3 IT:G incorporates an error correction code (ECC) technology for improving the reliability of the data stored in the memory. ECCs are used to detect and correct errors that can occur due to noise, crosstalk, or faulty transistor devices.

Conclusion

The MT47H128M8HQ-3 IT:G is a highly efficient, low power and low latency double data rate synchronous dynamic random-access memory (DDR SDRAM) device. It has a data bus width of 8-bits and can be utilized in a variety of applications such as network workstations, server platforms, embedded systems, digital audio/video applications and digital TV systems. It also includes features such as internal thermal throttle, write levelling and improved reliability features, making it suitable for a wide range of applications. Lastly, the utilization of 4n prefetches and output drivers make it twice as fast as its writing data rate.

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