MT47H128M8JN-3:H

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Memory is essential for a variety of electronic devices. Memory chips have been developed to offer improvements in performance, versatility and power efficiency, as well as increased storage capacity. The MT47H128M8JN-3:H memory chip is a specialized quality memory chip designed for high-end applications. It is a non-volatile double-data-rate random-access-memory (DDR-RAM).

The MT47H128M8JN-3:H has an 8-bit data bus architecture and is organized as a 16M x 8 memory device. This memory chip is fabricated using a high-end 180 nm CMOS process and has a 10ns access time to provide superior performance and compatibility. It has a 1.8V interface and can run at 133MHz speed. This memory chip is robust and reliable, as it is specially developed to withstand high temperatures, electrical noise and harsh industrial conditions.

One important feature of the MT47H128M8JN-3:H is its power management capability. The chip offers an independent power supply, allowing the user to operate it in a low-power, high-efficiency mode. This reduces the overall power consumption of an electronic device and thus improves its efficiency.

The application field for the MT47H128M8JN-3:H memory chip is wide-ranging. It is suitable for use in all arenas of electronic engineering, particularly in embedded applications. It is used in a variety of embedded systems, including automotive applications, mobile phones, medical instruments, digital signal processors, industrial controllers and in personal computers.

The working principle of the MT47H128M8JN-3:H is founded on the concept of data storage cells. Each storage cell consists of two transistors, a \'read\' transistor and a \'write\' transistor. The data is read and written to these cells using two different voltages. When a read cycle is initiated, one voltage is applied to the memory chip, causing the read transistor to activate, allowing data stored in the cell to be read. Similarly, when a write cycle is initiated, a different voltage is applied to the memory chip, causing the write transistor to activate, and data written to the cell.

The MT47H128M8JN-3:H memory chip can store data reliably and efficiently within an embedded system. It is designed to operate with minimal power consumption, and its power management capability enables extended operating life in battery-powered applications. It is also very robust and reliable, making it a perfect choice for high-end applications with extreme operating conditions.

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