| Allicdata Part #: | MT47H1G4WTR-25E:C-ND |
| Manufacturer Part#: |
MT47H1G4WTR-25E:C |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 4G PARALLEL 63FBGA |
| More Detail: | SDRAM - DDR2 Memory IC 4Gb (1G x 4) Parallel 400MH... |
| DataSheet: | MT47H1G4WTR-25E:C Datasheet/PDF |
| Quantity: | 1000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT47H1G4 |
| Supplier Device Package: | 63-FBGA (9x11.5) |
| Package / Case: | 63-FBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 85°C (TC) |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Memory Interface: | Parallel |
| Access Time: | 400ps |
| Series: | -- |
| Clock Frequency: | 400MHz |
| Memory Size: | 4Gb (1G x 4) |
| Technology: | SDRAM - DDR2 |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Bulk |
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Memory is an important component of any computing system or device because it stores and manages data or instructions. The MT47H1G4WTR-25E:C is one type of memory that is specifically designed for mobile, embedded and small form factor applications. This article will provide an overview of the MT47H1G4WTR-25E:C\'s application field and working principle.
The MT47H1G4WTR-25E:C is a DDR3L SDRAM (Synchronous Dynamic Random Access Memory). It is an economical design that meets the mobile, embedded and small form factor needs of any system. It offers a wide range of capacities including 256 Megabits, 512 Megabits, and 1 Gigabit sizes. The memory is also available in various package types such as TSOP, BGA, and FBGA. The MT47H1G4WTR-25E:C supports a wide range of bus clock speeds from 10 to 66 MHz, and it has a fast access time of less than 6 nanoseconds.
The MT47H1G4WTR-25E:C is designed for a variety of different applications and is particularly suited for mobile applications. It offers low power consumption levels, making it ideal for handheld and mobile devices that require long battery life. Additionally, it is well-suited for embedded applications where high performance and size limitations are important. The memory also offers better stability and reliability compared to other types of memory.
The MT47H1G4WTR-25E:C operates under the synchronous dynamic random access memory (SDRAM) protocol. Like other kinds of SDRAM, data is accessed in blocks of words. The memory has an integrated interface and can be configured to support external address and data buses, or to be used as a stand-alone memory. Additionally, the memory is designed to be able to handle burst accesses, which is in line with the high performance necessary for mobile and embedded applications.
The MT47H1G4WTR-25E:C memory operates by using two sets of commands, an address cycle and a data cycle. During the address cycle, the address of the data to be read is sent from the CPU. This address is used to locate the data in the memory. When the data is located, the memory initiates the data cycle which will send the data requested to the CPU. The memory supports burst accesses, which speeds up the process by allowing the CPU to send multiple requests in a single address cycle. The data cycle is then used to process these requests in rapid succession.
The MT47H1G4WTR-25E:C has been designed to meet the performance and reliability needs of mobile, embedded and small form factor applications. It is a cost-effective way to provide high-speed memory performance suitable for most applications. The memory operates under the SDRAM protocol, allowing the CPU to send and receives data in blocks of words. The burst access features of the memory provides a fast but reliable way to access data and supports the high performance requirements of the applications the memory is designed for.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| MT47H32M16BN-25E IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M4SH-25E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H32M16CC-5E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
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| MT47H128M8CF-3 AIT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
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| MT47H64M8CF-25E L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H32M16CC-5E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M4CB-3:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H128M8B7-37E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8CF-25E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H16M16BG-3E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H64M16HR-3 IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8CF-3 AAT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H256M8THN-25E:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H128M8JN-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8SH-187E:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16CC-37E L:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8B7-5E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H128M8BT-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M16HR-3 L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H512M4THN-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47R64M16HR-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16HR-25E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16HW-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8CF-25:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H256M8THN-3:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H64M16NF-25E AIT:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16HR-3:F | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H32M16HR-187E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8HQ-3 L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16CC-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H16M16BG-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H64M8CB-37E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HR-3 AIT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M8SH-25E AAT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 400... |
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MT47H1G4WTR-25E:C Datasheet/PDF