| Allicdata Part #: | MT47H32M16NF-25E:H-ND |
| Manufacturer Part#: |
MT47H32M16NF-25E:H |
| Price: | $ 2.71 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 512M PARALLEL 84FBGA |
| More Detail: | SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 4... |
| DataSheet: | MT47H32M16NF-25E:H Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 2.70833 |
| 10 +: | $ 2.34722 |
| 100 +: | $ 1.89583 |
| 1000 +: | $ 1.80556 |
| 10000 +: | $ 1.71528 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT47H32M16 |
| Supplier Device Package: | 84-FBGA (8x12.5) |
| Package / Case: | 84-TFBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 85°C (TC) |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Memory Interface: | Parallel |
| Access Time: | 400ps |
| Series: | -- |
| Clock Frequency: | 400MHz |
| Memory Size: | 512Mb (32M x 16) |
| Technology: | SDRAM - DDR2 |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Active |
| Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technology is rapidly evolving, and its impact on the advancement of computer systems and their corresponding applications cannot be overstated. The MT47H32M16NF-25E:H is one of the newer memory devices in the market, and its use in modern applications has been growing steadily since its launch. This article provides an overview of the MT47H32M16NF-25E:H’s application fields and its underlying working principle.
Application Fields
The MT47H32M16NF-25E:H is designed to provide high-performance data storage and retrieval. It is widely used in artificial intelligence applications, such as search engines, machine learning and natural language processing, where large datasets are required to be processed and stored quickly. Currently, the memory can also be used in robotics, automotive, Internet of Things (IoT), wearable devices and medical/industrial applications.
For instance, the memory can facilitate faster and smoother rendering of high-resolution videos and graphics, allowing for the creation of complex visual effects in gaming, industrial, and medical simulation (e.g. 3D imaging). Furthermore, its power and performance can enable the development of sophisticated autonomous vehicles and robots.
The device is also suitable for use in dynamic memory applications such as networking, storage and server systems, where frequent updates and data access are essential. It is capable of providing high-speed, reliable performance when dealing with a large amount of data.
Working Principle
The MT47H32M16NF-25E:H uses a double cell architecture to provide two separate memory pages, which are managed independently of each other. This allows the device to access data from both cells simultaneously, speeding up the data retrieval process.
In order to achieve its high performance, the memory employs specialized memory error-correcting codes (ECCs), which are integrated circuits that are used to detect and correct data-retrieval errors. The ECMs are designed to detect and alert the user about any irregularities in the data, allowing for quick corrections to be made and ensuring that the system is always in good working condition.
The memory also supports burst, page and interleaved access modes, which enable it to transfer data faster and more efficiently. Additionally, the device utilizes an on-chip cache, which eliminates the need to store data in a slow external memory. This feature further improves the performance of the memory, allowing it to respond to new operations quickly.
Overall, the MT47H32M16NF-25E:H is a reliable, high-speed memory solution that offers a wide range of benefits for modern applications. Its specialized design and high performance allow it to be a viable choice for a wide range of memory needs, from AI to robotics.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT47H128M4B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HW-3 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16NF-187E:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H32M16BN-25E IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M4SH-25E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H32M16CC-5E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H16M16BG-5E:B | Micron Techn... | -- | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H128M8CF-3 AIT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8BT-3 L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8CF-25E L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H32M16CC-5E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M4CB-3:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H128M8B7-37E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8CF-25E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H16M16BG-3E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H64M16HR-3 IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8CF-3 AAT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H256M8THN-25E:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H128M8JN-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8SH-187E:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16CC-37E L:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8B7-5E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H128M8BT-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M16HR-3 L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H512M4THN-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47R64M16HR-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16HR-25E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16HW-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8CF-25:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H256M8THN-3:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H64M16NF-25E AIT:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16HR-3:F | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H32M16HR-187E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8HQ-3 L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16CC-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H16M16BG-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H64M8CB-37E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HR-3 AIT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M8SH-25E AAT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 400... |
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MT47H32M16NF-25E:H Datasheet/PDF