MT47H64M16NF-25E AUT:M TR Allicdata Electronics
Allicdata Part #:

MT47H64M16NF-25EAUT:MTR-ND

Manufacturer Part#:

MT47H64M16NF-25E AUT:M TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 1G PARALLEL 84FBGA
More Detail: SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400...
DataSheet: MT47H64M16NF-25E AUT:M TR datasheetMT47H64M16NF-25E AUT:M TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory technology is an incredibly important part of modern computing. Recently, the development of new memory technologies, like the MT47H64M16NF-25E AUT:M TR, has enabled massive improvements in the speed and scalability of applications. But how does this memory work and what are its applications?

Overview
The MT47H64M16NF-25E AUT:M TR is an advanced Double-Data-Rate Synchronous Dynamic Random Access Memory module. It is a type of semiconductor memory based on a dynamic random-access memory architecture, using a regular backing store to keep data in. It was developed specifically to support high-performance workloads, offering improved read and write speeds, and improved scalability.

Working Principle
The main working principle of the MT47H64M16NF-25E AUT:M TR memory is based on a dynamic RAM architecture. In dynamic RAM, instead of storing data in an actual physical storage device, the data is stored in electronic capacitors which can be quickly changed to represent different values. This is done by connecting each capacitor to a transistor, which then provides the electrical charge to store the data in the memory cell. When a read operation needs to be performed, this charge is quickly changed in order to represent the desired data.

To access the data, the MT47H64M16NF-25E AUT:M TR memory uses a Double-Data-Rate Synchronous protocol. In this protocol, every clock cycle transfers two bits of data, meaning that the memory can access data at twice the rate of a single-data-rate memory module. This speeds up the process of reading data from memory, and increases the overall scalability of the device.

Application Field
The MT47H64M16NF-25E AUT:M TR memory is used mainly in high-performance applications such as gaming and PC applications. Thanks to its improved read and write speeds and scalability, it can be used to improve the performance of applications which require a large amount of data to be processed quickly. It is also used in memory- intensive applications such as scientific calculations and analytics, where large amounts of data need to be quickly written and read from memory. Additionally, it is also used in embedded systems where space is limited and high-performance memory is required.

The MT47H64M16NF-25E AUT:M TR memory is an example of how modern memory technologies are improving the speed and scalability of applications. Thanks to its advanced dynamic RAM architecture and Double-Data-Rate Synchronous protocol, it is capable of providing improved read and write speeds, which make it ideal for high-performance applications. It is also used in embedded systems, where it can help improve the scalability of applications which require a high amount of memory.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MT47" Included word is 40
Part Number Manufacturer Price Quantity Description
MT47H128M4B6-3:D TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 60F...
MT47H64M16HW-3 IT:H Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H64M16NF-187E:M Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H32M16BN-25E IT:D TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 84F...
MT47H128M4SH-25E:H TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 60F...
MT47H32M16CC-5E IT:B Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 84F...
MT47H16M16BG-5E:B Micron Techn... -- 1000 IC DRAM 256M PARALLEL 84F...
MT47H128M8CF-3 AIT:H Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H128M8BT-3 L:A Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 92FBG...
MT47H64M8CF-25E L:G TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 60F...
MT47H32M16CC-5E:B TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 84F...
MT47H128M4CB-3:B Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 60F...
MT47H128M8B7-37E L:A Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 92FBG...
MT47H64M8CF-25E:G TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 60F...
MT47H16M16BG-3E:B Micron Techn... 0.0 $ 1000 IC DRAM 256M PARALLEL 84F...
MT47H64M16HR-3 IT:G TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H128M8CF-3 AAT:H TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H256M8THN-25E:M TR Micron Techn... 0.0 $ 1000 IC DRAM 2G PARALLEL 63FBG...
MT47H128M8JN-25E:H Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H128M8SH-187E:M TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H32M16CC-37E L:B TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 84F...
MT47H128M8B7-5E:A TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 92FBG...
MT47H128M8BT-5E:A Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 92FBG...
MT47H64M16HR-3 L:G TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H512M4THN-25E:H Micron Techn... 0.0 $ 1000 IC DRAM 2G PARALLEL 63FBG...
MT47R64M16HR-25E:H Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H64M16HR-25E:H TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H64M16HW-3:H Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H128M8CF-25:H TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H256M8THN-3:H TR Micron Techn... 0.0 $ 1000 IC DRAM 2G PARALLEL 63FBG...
MT47H64M16NF-25E AIT:M Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H128M8HQ-187E:E TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H32M16HR-3:F Micron Techn... -- 1000 IC DRAM 512M PARALLEL 84F...
MT47H32M16HR-187E:G TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 84F...
MT47H128M8HQ-3 L:G TR Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 60FBG...
MT47H32M16CC-37E:B TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 84F...
MT47H16M16BG-37E:B TR Micron Techn... 0.0 $ 1000 IC DRAM 256M PARALLEL 84F...
MT47H64M8CB-37E IT:B Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 60F...
MT47H64M16HR-3 AIT:H Micron Techn... 0.0 $ 1000 IC DRAM 1G PARALLEL 84FBG...
MT47H64M8SH-25E AAT:H TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 400...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics