| Allicdata Part #: | MT47H64M16NF-25EAUT:MTR-ND |
| Manufacturer Part#: |
MT47H64M16NF-25E AUT:M TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 1G PARALLEL 84FBGA |
| More Detail: | SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400... |
| DataSheet: | MT47H64M16NF-25E AUT:M TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - DDR2 |
| Memory Size: | 1Gb (64M x 16) |
| Clock Frequency: | 400MHz |
| Write Cycle Time - Word, Page: | 15ns |
| Access Time: | 400ps |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Operating Temperature: | -40°C ~ 125°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 84-TFBGA |
| Supplier Device Package: | 84-FBGA (8x12.5) |
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Memory technology is an incredibly important part of modern computing. Recently, the development of new memory technologies, like the MT47H64M16NF-25E AUT:M TR, has enabled massive improvements in the speed and scalability of applications. But how does this memory work and what are its applications?
Overview
The MT47H64M16NF-25E AUT:M TR is an advanced Double-Data-Rate Synchronous Dynamic Random Access Memory module. It is a type of semiconductor memory based on a dynamic random-access memory architecture, using a regular backing store to keep data in. It was developed specifically to support high-performance workloads, offering improved read and write speeds, and improved scalability.
Working Principle
The main working principle of the MT47H64M16NF-25E AUT:M TR memory is based on a dynamic RAM architecture. In dynamic RAM, instead of storing data in an actual physical storage device, the data is stored in electronic capacitors which can be quickly changed to represent different values. This is done by connecting each capacitor to a transistor, which then provides the electrical charge to store the data in the memory cell. When a read operation needs to be performed, this charge is quickly changed in order to represent the desired data.
To access the data, the MT47H64M16NF-25E AUT:M TR memory uses a Double-Data-Rate Synchronous protocol. In this protocol, every clock cycle transfers two bits of data, meaning that the memory can access data at twice the rate of a single-data-rate memory module. This speeds up the process of reading data from memory, and increases the overall scalability of the device.
Application Field
The MT47H64M16NF-25E AUT:M TR memory is used mainly in high-performance applications such as gaming and PC applications. Thanks to its improved read and write speeds and scalability, it can be used to improve the performance of applications which require a large amount of data to be processed quickly. It is also used in memory- intensive applications such as scientific calculations and analytics, where large amounts of data need to be quickly written and read from memory. Additionally, it is also used in embedded systems where space is limited and high-performance memory is required.
The MT47H64M16NF-25E AUT:M TR memory is an example of how modern memory technologies are improving the speed and scalability of applications. Thanks to its advanced dynamic RAM architecture and Double-Data-Rate Synchronous protocol, it is capable of providing improved read and write speeds, which make it ideal for high-performance applications. It is also used in embedded systems, where it can help improve the scalability of applications which require a high amount of memory.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT47H128M4B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HW-3 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16NF-187E:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H32M16BN-25E IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M4SH-25E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H32M16CC-5E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H16M16BG-5E:B | Micron Techn... | -- | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H128M8CF-3 AIT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8BT-3 L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8CF-25E L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H32M16CC-5E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M4CB-3:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H128M8B7-37E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8CF-25E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H16M16BG-3E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H64M16HR-3 IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8CF-3 AAT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H256M8THN-25E:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H128M8JN-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8SH-187E:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16CC-37E L:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8B7-5E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H128M8BT-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M16HR-3 L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H512M4THN-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47R64M16HR-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16HR-25E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16HW-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8CF-25:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H256M8THN-3:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H64M16NF-25E AIT:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16HR-3:F | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H32M16HR-187E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8HQ-3 L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16CC-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H16M16BG-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H64M8CB-37E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HR-3 AIT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M8SH-25E AAT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 400... |
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MT47H64M16NF-25E AUT:M TR Datasheet/PDF