MT47H64M8B6-25:D TR

Memory: MT47H64M8B6-25:D TR Application Field and Working Principle

Memory is a basic component of a variety of electronic equipment and is widely used. In order to meet the needs of electronic equipment, memory products on the market are also constantly being updated and upgraded. MT47H64M8B6-25:D TR, as one of the new memory products, has gradually become favored by the electronics industry.

1. Application Field and Development Trend of MT47H64M8B6-25:D TR

The MT47H64M8B6-25:D TR memory is a doubledata-rate synchronous dynamic random access memory (SDRAM) that can be used in a variety of applications requiring high-performance random access memory (RAM) such as high-end personal computers, embedded systems, server systems, digital signal processors, image signal processors and mobile device applications. In response to the trend of increasing computing power in mobile terminals, the MT47H64M8B6-25:D TR memory has a wide range of operating frequency and data bus width, making it suitable for mobile devices. Compared to other conventional low-power memories, the MT47H64M8B6-25:D TR has improved timings and power consumption, making it suitable for a variety of small form factor mobile devices and intensifying the need for low power solutions.

2. Working Principle of MT47H64M8B6-25:D TR Memory

The MT47H64M8B6-25:D TR memory consists of an integrated circuit fabricated with a single chip. The memory is composed of a memory array, an I/O interface unit, address registers and control logic circuits. The memory array, composed of 2-transistor cells, is divided into 8 addressable blocks, each containing 64K bits of storage cells. The I/O interface unit allows addresses to be transferred to and from the memory, while the control logic circuit enables timing control of all operations in the memory.

When a new transaction begins, the address registers receive the initial address and the column address select circuitry decides whether the given address is a row address or a column address. If the given address is a row address, the row decoder circuit activates the selected row. If the given address is a column address, the column’s data is read or written. When a new write transaction is set up, the write data is provided by the transmit line and stored in the write latch.

Synchronous operations of the MT47H64M8B6-25:D TR memory can be divided into three timing modes, which are burst mode, single access mode, and page mode. In burst mode, data output from the memory array is maintained in a pipeline format, allowing multiple pieces of data to be read or written in a consecutive manner. In single access mode, the data read or write operations are performed in a sequential order. In page mode, data is written in the same page and can be accessed multiple times.

3. Advantages of MT47H64M8B6-25:D TR Memory

In addition to its wide range of operating frequency and data bus width, the MT47H64M8B6-25:D TR memory has many other advantages. First, it has a high data transfer rate, reaching up to 25.6 GB/s for a 64-bit interface. Second, the MT47H64M8B6-25:D TR memory supports error checking and correcting (ECC) function and multi-bit burst read and write. This makes the memory highly reliable and ensures data integrity. Third, the MT47H64M8B6-25:D TR memory supports a power down mode which can save power and reduce the idle power consumption. Last but not least, the memory has excellent thermal characteristics with a maximum absolute temperature of 105 degree Celsius.

Conclusion

The MT47H64M8B6-25:D TR memory has become a preferred product in the electronics industry due to its wide range of application fields and advantages. Its wide range of operating frequency and data bus width makes it suitable for a variety of applications on mobile devices, while its high data transfer rate and ECC support makes it a reliable memory choice. In addition, the MT47H64M8B6-25:D TR memory supports a power down mode which can reduce the idle power consumption, making it suitable for low-power applications. The MT47H64M8B6-25:D TR memory is expected to have a broad application range in the near future.