MT47H64M8CB-25:B Allicdata Electronics
Allicdata Part #:

MT47H64M8CB-25:B-ND

Manufacturer Part#:

MT47H64M8CB-25:B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 512M PARALLEL 60FBGA
More Detail: SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 40...
DataSheet: MT47H64M8CB-25:B datasheetMT47H64M8CB-25:B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT47H64M8
Supplier Device Package: 60-FBGA
Package / Case: 60-FBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 400ps
Series: --
Clock Frequency: 400MHz
Memory Size: 512Mb (64M x 8)
Technology: SDRAM - DDR2
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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MT47H64M8CB-25:B is a type of memory. It is a high-speed and low power double-data-rate Synchronous Dynamic Random Access Memory (SDRAM). It has an 8-bank architecture and supports a range of memory capacities from 256Mbit to 4Gbit. The memory operates in a 125 MHz to 200 MHz range. This memory product is designed specifically for high-performance applications, such as networking systems and embedded systems.

The primary application of MT47H64M8CB-25:B is in networking systems and embedded systems. In these systems, the memory is often used to store large amounts of data quickly. Examples include switching and routing systems, as well as digital data processing. The memory also provides high-performance memory access times, allowing for fast processing of data.

The MT47H64M8CB-25:B also provides a range of features and benefits in addition to its high-performance capabilities. It features low power consumption, allowing it to be used in portable devices. It also features high reliability and stability, which is important in mission-critical applications.

The working principle of MT47H64M8CB-25:B is based on the architecture of Synchronous Dynamic Random Access Memory (SDRAM). This type of memory is designed to use a clocked synchronous interface to access data from a memory array. The memory consists of multiple memory banks, each of which contains an array of memory cells. Each individual memory cell stores a bit of data, and the entire array is accessed at once.

The SDRAM architecture allows for a highly efficient data transfer rate. When a memory access is requested, the address of the data is presented to the SDRAM. This address is then sent to the memory array, which locates the corresponding data. The data is then presented to the output of the array, allowing for a fast and efficient transfer of data.

The MT47H64M8CB-25:B also features an on-die termination system, which allows for better signal integrity and improved performance. This feature also helps to minimize the need for AC termination, which can reduce the power consumption of the system.

In summary, the MT47H64M8CB-25:B is a type of high-speed, low power double-data-rate Synchronous Dynamic Random Access Memory (SDRAM). It is designed specifically for high-performance applications, such as networking systems and embedded systems. Its working principle is based on the architecture of SDRAM, featuring an on-die termination system for improved performance. The memory is designed for high-speed memory access times, allowing for fast data processing.

The specific data is subject to PDF, and the above content is for reference

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