| Allicdata Part #: | MT47H64M8SH-187E:HTR-ND |
| Manufacturer Part#: |
MT47H64M8SH-187E:H TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 512M PARALLEL 533MHZ |
| More Detail: | SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 53... |
| DataSheet: | MT47H64M8SH-187E:H TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - DDR2 |
| Memory Size: | 512Mb (64M x 8) |
| Clock Frequency: | 533MHz |
| Write Cycle Time - Word, Page: | 15ns |
| Access Time: | 350ps |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Operating Temperature: | 0°C ~ 85°C (TC) |
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MT47H64M8SH-187E:H TR Application Field and Working Principle
The MT47H64M8SH-187E:H TR is a double data rate synchronous dynamic random access memory (DDR SDRAM) component, which has a wide range of applications in computer systems, networking, communications and mobile devices. As a member of the DDR SDRAM family, the MT47H64M8SH-187E:H TR provides high-speed data storage and high-quality content delivery, making it an ideal choice for high-performance computing applications. This article will explore its application field, discuss its working principle and explain how it works in practice.
Application Field
In computing, the use of MT47H64M8SH-187E:H TR can be seen in various applications, including but not limited to personal computers, gaming consoles, laptops, tablets and mobile devices. It is also widely used in embedded systems such as automotive navigation systems, video surveillance systems, home automation and industrial control systems, among many other applications. The MT47H64M8SH-187E:H TR is used in these applications because it provides high-speed data storage, improved reliability and fast data access times.
The MT47H64M8SH-187E:H TR is also used in networking applications where its high-speed data access and low latency times help reduce latency even in geographically distributed networks. It is ideal for data centers, web hosting and cloud computing applications due to its low power consumption and high-speed data transfer capabilities. Additionally, it is used in telecommunications applications, where its high data bus bandwidth and storage density help increase transmission efficiency and reduce the need for large amounts of server space.
Working Principle
The MT47H64M8SH-187E:H TR utilizes double data rate (DDR) SDRAM technology, which is a memory technology designed to store data at very high speeds. This technology achieves high data transfer rates by transferring twice the amount of data per clock cycle as compared to single data rate (SDR) SDRAM. The MT47H64M8SH-187E:H TR operates on a 64-bit wide data bus and works at an effective speed of 187 MHz.
When data is written to the memory, the MT47H64M8SH-187E:H TR will read the data, store it in its volatile memory cells and then transfer it to a non-volatile storage device, such as a hard drive or solid state drive. On the other hand, when data is read from the memory, the MT47H64M8SH-187E:H TR will first retrieve the data from its non-volatile storage device and then transfer it to its volatile memory cells, where it is then available for reading to the user.
In order to achieve this high data access and transfer rates, the MT47H64M8SH-187E:H TR utilizes a fully synchronized bus. This bus contains two separate data lines, one for reading and one for writing, each operating twice the effective speed of the bus. This enables the MT47H64M8SH-187E:H TR to transfer and store data at higher speeds than other memory components, resulting in improved performance in any computing or networking application.
Conclusion
The MT47H64M8SH-187E:H TR is a high-performance DDR SDRAM component that is ideal for a wide range of applications, such as personal computers, gaming consoles, laptops, tablets and mobile devices. The MT47H64M8SH-187E:H TR achieves high data transfer rates and low latency times due to its fully synchronized bus and two separate data lines, one for reading and one for writing, which operate at twice the effective speed of the bus. For these reasons, the MT47H64M8SH-187E:H TR is an excellent choice for any high-performance computing application.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| MT47H64M16NF-187E:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H32M16BN-25E IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M4SH-25E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H32M16CC-5E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H16M16BG-5E:B | Micron Techn... | -- | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H128M8CF-3 AIT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8BT-3 L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8CF-25E L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H32M16CC-5E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M4CB-3:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H128M8B7-37E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M8CF-25E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H16M16BG-3E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H64M16HR-3 IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8CF-3 AAT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H256M8THN-25E:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H128M8JN-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H128M8SH-187E:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16CC-37E L:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8B7-5E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H128M8BT-5E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
| MT47H64M16HR-3 L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H512M4THN-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47R64M16HR-25E:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16HR-25E:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M16HW-3:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8CF-25:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H256M8THN-3:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
| MT47H64M16NF-25E AIT:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H128M8HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16HR-3:F | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H32M16HR-187E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H128M8HQ-3 L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
| MT47H32M16CC-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
| MT47H16M16BG-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
| MT47H64M8CB-37E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT47H64M16HR-3 AIT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
| MT47H64M8SH-25E AAT:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 400... |
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MT47H64M8SH-187E:H TR Datasheet/PDF